High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

Veena Misra; Xiaoli Xu; Brian E. Hornung; Richard T. Kuehn; Donald S. Miles; John R. Hauser; Jimmie J. Wortman

doi:10.1007/bf02666631

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

Journal of Electronic Materials ◽

10.1007/bf02666631 ◽

1996 ◽

Vol 25 (3) ◽

pp. 527-535 ◽

Cited By ~ 8

Author(s):

Veena Misra ◽

Xiaoli Xu ◽

Brian E. Hornung ◽

Richard T. Kuehn ◽

Donald S. Miles ◽

...

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

High Quality ◽

Thermal Chemical Vapor Deposition

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Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1500420 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2807-2809 ◽

Cited By ~ 31

Author(s):

S. J. Lee ◽

T. S. Jeon ◽

D. L. Kwong ◽

R. Clark

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Hafnium Oxide ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Thermal Chemical Vapor Deposition ◽

Vapor Deposition Process

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Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition

Carbon ◽

10.1016/j.carbon.2011.09.012 ◽

2012 ◽

Vol 50 (2) ◽

pp. 551-556 ◽

Cited By ~ 76

Author(s):

L. Huang ◽

Q.H. Chang ◽

G.L. Guo ◽

Y. Liu ◽

Y.Q. Xie ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Quality ◽

Thermal Chemical Vapor Deposition ◽

Graphene Films

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High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)

10.1117/12.963963 ◽

1990 ◽

Author(s):

Martin L. Green ◽

H. Temkin ◽

D. Brasen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Quality ◽

Thermal Chemical Vapor Deposition

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Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.491252 ◽

1996 ◽

Vol 43 (5) ◽

pp. 753-758 ◽

Cited By ~ 25

Author(s):

E.M. Vogel ◽

W.L. Hill ◽

V. Misra ◽

P.K. McLarty ◽

J.J. Wortman ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Low Pressure ◽

Thermal Chemical Vapor Deposition ◽

Mobility Behaviour

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ChemInform Abstract: Formation of High-Quality Nitrided Silicon Dioxide Films Using Electron-Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane.

ChemInform ◽

10.1002/chin.199637324 ◽

2010 ◽

Vol 27 (37) ◽

pp. no-no

Author(s):

D. LANDHEER ◽

Y. TAO ◽

J. E. HULSE ◽

T. QUANCE ◽

D.-X. XU

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

High Quality ◽

Silicon Dioxide Films

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Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.477588 ◽

1996 ◽

Vol 43 (1) ◽

pp. 15-22 ◽

Cited By ~ 42

Author(s):

W.L. Hill ◽

E.M. Vogel ◽

V. Misra ◽

P.K. McLarty ◽

J.J. Wortman

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Low Pressure ◽

Thermal Chemical Vapor Deposition

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Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/8/4/011 ◽

1991 ◽

Vol 8 (4) ◽

pp. 203-206

Author(s):

Yu San ◽

Jin Zengsun ◽

Lü Xianyi ◽

Zou Guangtian

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Quality ◽

Thermal Chemical Vapor Deposition ◽

Diamond Thin Films ◽

P Type

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Growth of high-quality single-walled carbon nanotubes through the thermal chemical vapor deposition using co-sputtering Fe–Mo films as catalysts

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2005.07.043 ◽

2006 ◽

Vol 200 (10) ◽

pp. 3199-3202 ◽

Cited By ~ 8

Author(s):

Chien-Chao Chiu ◽

Chia-Yun Chen ◽

Nyan-Hwa Tai ◽

Chuen-Horng Tsai

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Walled Carbon Nanotubes ◽

High Quality ◽

Thermal Chemical Vapor Deposition ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes

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Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

Applied Physics Letters ◽

10.1063/1.106757 ◽

1992 ◽

Vol 60 (24) ◽

pp. 3063-3065 ◽

Cited By ~ 31

Author(s):

X. L. Xu ◽

R. T. Kuehn ◽

J. J. Wortman ◽

M. C. Öztürk

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Oxide ◽

Oxide Films ◽

Chemical Vapor ◽

Thermal Chemical Vapor Deposition ◽

Thin Silicon

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Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane

Journal of The Electrochemical Society ◽

10.1149/1.1836699 ◽

1996 ◽

Vol 143 (5) ◽

pp. 1681-1684 ◽

Cited By ~ 17

Author(s):

D. Landheer ◽

Y. Tao ◽

J. E. Hulse ◽

T. Quance ◽

D. Xu

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

High Quality ◽

Silicon Dioxide Films

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