DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As

1995 ◽  
Vol 24 (7) ◽  
pp. 907-912 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
A. G. de Oliveira ◽  
G. M. Ribeiro ◽  
D. A. W. Soares
Keyword(s):  
Energy Level ◽  
Doping Concentration ◽  
Silicon Doping ◽  
Dx Center

Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As

1986 ◽  
Vol 48 (16) ◽  
pp. 1093-1095 ◽  
Author(s):  
N. S. Caswell ◽  
P. M. Mooney ◽  
S. L. Wright ◽  
P. M. Solomon
Keyword(s):  
Doping Concentration ◽  
Silicon Doping ◽  
Recombination Kinetics

Determination of the Lifetime Influence Upon the Conversion Efficiency of the Photovoltaic Silicon Solar Cells

2017 ◽  
Vol 17 (2) ◽  
pp. 20-24
Author(s):  
G. Preduşcă ◽  
C. Fluieraru
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Conversion Efficiency ◽  
Light Absorption ◽  
Doping Concentration ◽  
Life Time ◽  
Silicon Solar Cells ◽  
Recombination Processes

AbstractIf the electrons and holes in excess are created in a semiconductor, either by means of light absorption, or using other methods, the thermic balance is disturbed, therefore these electrons and holes should be nullified after the source had been stopped. This process is named recombination. There are three main recombination types: radioactive, Auger and deep energy level recombination. All three are based on the doping concentration to a certain point. The life time is determined using the three recombination processes in semiconductor.

Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress

1999 ◽  
Vol 595 ◽  
Author(s):  
P.R. Hageman ◽  
V. Kirilyuk ◽  
A.R.A. Zauner ◽  
G.J. Bauhuis ◽  
P.K. Larsen
Keyword(s):  
Optical Properties ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Doping Concentration ◽  
Free Carrier ◽  
Silicon Doping ◽  
Sapphire Substrates ◽  
Uv Emission ◽  
Silicon Doped

AbstractSilicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n=2.5×1018 cm−3.

Atomic layer epitaxy of InAs with high silicon doping concentration

2020 ◽  
Vol 38 (5) ◽  
pp. 052410
Author(s):  
Doron Cohen Elias ◽  
Guy M. Cohen ◽  
David Memram ◽  
Shmuel Saad ◽  
Arnold Bloom ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Silicon Doping ◽  
High Silicon

DX Center Energy Level in InxAl1−xAs Compounds

1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Canonical Ensemble ◽  
Grand Canonical Ensemble ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Indium Concentration ◽  
Self Consistent ◽  
Dx Center ◽  
Grand Canonical

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.

The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC

1998 ◽  
Vol 510 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Activation Energy ◽  
Energy Level ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Conduction Mechanism ◽  
Thermal Activation Energy ◽  
Free Carrier ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Nitrogen Activation

AbstractThermal admittance spectroscopy has been used to study the thermal activation energy of nitrogen at the hexagonal and cubic sites in 4H-SiC as function of net doping concentration. The net doping concentration- of te samples, which was determined from 1/C2 vs. V plots, ranges from 1.5 × 1014 cm−3 to 4 × 1018 cm−3. The thermal activation energy of nitrogen was determined to be Ee O.054 eV and Ee O.101 eV for nitrogen at hexagonal and cubic sites respectively for ND - NA ≤ 1016 cm−3. As the free carrier concentration increases from 1016 cm−3 to 1.0 × 1018 cm3, the thermal activation energy of nitrogen at the hexagonal site decreases from 54 meV to 24 meV. At ND - NA ≥1.0 × 10 cm−3 hopping conduction is the only conduction mechanism and has an activation energy of 3-9 meV.

Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs

2015 ◽  
Vol 106 (10) ◽  
pp. 102104
Author(s):  
Stefan Heckelmann ◽  
David Lackner ◽  
Andreas W. Bett
Keyword(s):  
Energy Level ◽  
Dx Center

DX Center in GaAs-GaAlAs Superlattices Suppression and Identification

1989 ◽  
Vol 148 ◽  
Author(s):  
S.L. Feng ◽  
J.C. Bourgoin ◽  
H.J. von Bardeleben ◽  
E. Barbier ◽  
J.P. Hirtz ◽  
...  
Keyword(s):  
Energy Level ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Short Period ◽  
Short Period Superlattices ◽  
In Series ◽  
Dx Center ◽  
Transient Spectroscopy

ABSTRACTThe DX center has been studied by Deep Level Transient Spectroscopy in series of GaAs-Ga1-xAlxAs (x = 0.3) and GaAs-AlAs short period superlattices. The existence or not of this center can be understood if its energy level is linked to the L miniband. This suggest a possible way to suppress them by using specific superlattices.

Number of Steps Walked Predicts Energy Level, and Mood

2013 ◽  
Author(s):  
Robert E. Thayer ◽  
Olga Godes ◽  
Nicole E. Lobato ◽  
Marcelino Serrano ◽  
Jorge Hernandez ◽  
...  
Keyword(s):  
Energy Level
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