Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs

2015 ◽  
Vol 106 (10) ◽  
pp. 102104
Author(s):  
Stefan Heckelmann ◽  
David Lackner ◽  
Andreas W. Bett
Keyword(s):  
1999 ◽  
Vol 573 ◽  
Author(s):  
Hüseyin Sari ◽  
Harry H. wieder

ABSTRACTThe presence of DX centers in InxAl1−xAs, primarily in the indirect portion of the InxAl1−xAs bandgap, has been determined using modulation doped InxAl1−xAs/InyGa1−yAs heterostructures by means of persistent photoconductivity (PPC) and galvanomagnetic measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrddinger simulations the ratio of the ionized shallow donors to the DX centers is obtained. Using this ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x ≅ 0.42 and is resonant with the conduction band in higher indium concentration.


1995 ◽  
Vol 24 (7) ◽  
pp. 907-912 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
A. G. de Oliveira ◽  
G. M. Ribeiro ◽  
D. A. W. Soares

1989 ◽  
Vol 148 ◽  
Author(s):  
S.L. Feng ◽  
J.C. Bourgoin ◽  
H.J. von Bardeleben ◽  
E. Barbier ◽  
J.P. Hirtz ◽  
...  

ABSTRACTThe DX center has been studied by Deep Level Transient Spectroscopy in series of GaAs-Ga1-xAlxAs (x = 0.3) and GaAs-AlAs short period superlattices. The existence or not of this center can be understood if its energy level is linked to the L miniband. This suggest a possible way to suppress them by using specific superlattices.


2013 ◽  
Author(s):  
Robert E. Thayer ◽  
Olga Godes ◽  
Nicole E. Lobato ◽  
Marcelino Serrano ◽  
Jorge Hernandez ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document