DX Center in GaAs-GaAlAs Superlattices Suppression and Identification

1989 ◽  
Vol 148 ◽  
Author(s):  
S.L. Feng ◽  
J.C. Bourgoin ◽  
H.J. von Bardeleben ◽  
E. Barbier ◽  
J.P. Hirtz ◽  
...  
Keyword(s):  
Energy Level ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Short Period ◽  
Short Period Superlattices ◽  
In Series ◽  
Dx Center ◽  
Transient Spectroscopy

ABSTRACTThe DX center has been studied by Deep Level Transient Spectroscopy in series of GaAs-Ga1-xAlxAs (x = 0.3) and GaAs-AlAs short period superlattices. The existence or not of this center can be understood if its energy level is linked to the L miniband. This suggest a possible way to suppress them by using specific superlattices.

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

2008 ◽  
Vol 600-603 ◽  
pp. 755-758 ◽  
Author(s):  
Fredrik Allerstam ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Traps ◽  
Enhanced Oxidation ◽  
Transient Spectroscopy

This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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