The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC

1998 ◽  
Vol 510 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Activation Energy ◽  
Energy Level ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Conduction Mechanism ◽  
Thermal Activation Energy ◽  
Free Carrier ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Nitrogen Activation

AbstractThermal admittance spectroscopy has been used to study the thermal activation energy of nitrogen at the hexagonal and cubic sites in 4H-SiC as function of net doping concentration. The net doping concentration- of te samples, which was determined from 1/C2 vs. V plots, ranges from 1.5 × 1014 cm−3 to 4 × 1018 cm−3. The thermal activation energy of nitrogen was determined to be Ee O.054 eV and Ee O.101 eV for nitrogen at hexagonal and cubic sites respectively for ND - NA ≤ 1016 cm−3. As the free carrier concentration increases from 1016 cm−3 to 1.0 × 1018 cm3, the thermal activation energy of nitrogen at the hexagonal site decreases from 54 meV to 24 meV. At ND - NA ≥1.0 × 10 cm−3 hopping conduction is the only conduction mechanism and has an activation energy of 3-9 meV.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

Effects of doping concentration on thermal activation energy of trap centers in irradiated LiF:Mg2+ single crystals

2013 ◽  
Vol 88 (4) ◽  
pp. 375-379 ◽  
Author(s):  
H. Sadeghi ◽  
M. R. Jalali ◽  
S. Mohammadi ◽  
H. Jahanbakhsh ◽  
M. Kavosh
Keyword(s):  
Activation Energy ◽  
Single Crystals ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Thermal Activation Energy

scholarly journals Electrical and Photoelectrical Characterization of Deep Defects In Cubic GaN on GaAs

1999 ◽  
Vol 4 (S1) ◽  
pp. 185-190
Author(s):  
M. Lisker ◽  
A. Krtschil ◽  
H. Witte ◽  
J. Christen ◽  
D.J. AS ◽  
...  
Keyword(s):  
Activation Energy ◽  
Gaas Substrate ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Activation Energy ◽  
Rf Plasma ◽  
Admittance Spectroscopy ◽  
Gaas Substrates ◽  
Cubic Gan

Nominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG-(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.

Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Lisker ◽  
A. Krtschil ◽  
H. Witte ◽  
J. Christen ◽  
D.J. As ◽  
...  
Keyword(s):  
Activation Energy ◽  
Gaas Substrate ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Activation Energy ◽  
Rf Plasma ◽  
Admittance Spectroscopy ◽  
Gaas Substrates ◽  
Cubic Gan

AbstractNominally undoped cubic GaN epilayers deposited by rf-plasma assisted molecular beam epitaxy on semi-insulating GaAs substrates were investigated by electric and photoelectric spectroscopical methods. As a consequence of the existence of deep levels in the GaAs-substrate itself, special care has to be taken to separate the contributions of the substrate from that of the cubic GaN epilayer in the various spectra. Two different contact configurations (coplanar and sandwich structures) were successfully used to perform this separation. In the cubic GaN epilayer a trap with a thermal activation energy of (85±20)meV was found by thermal admittance spectroscopy and thermal stimulated currents. Optical admittance spectroscopy and photocurrent measurements furthermore revealed defects at EG -(0.04-0.13) eV, EG-(0.21-0.82) eV and two additional deeper defects at 1.91 Ev and 2.1 eV, respectively. These defect related transitions are very similar to those observed in hexagonal GaN.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

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