Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As

1986 ◽  
Vol 48 (16) ◽  
pp. 1093-1095 ◽  
Author(s):  
N. S. Caswell ◽  
P. M. Mooney ◽  
S. L. Wright ◽  
P. M. Solomon
Keyword(s):  
Doping Concentration ◽  
Silicon Doping ◽  
Recombination Kinetics

Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress

1999 ◽  
Vol 595 ◽  
Author(s):  
P.R. Hageman ◽  
V. Kirilyuk ◽  
A.R.A. Zauner ◽  
G.J. Bauhuis ◽  
P.K. Larsen
Keyword(s):  
Optical Properties ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Doping Concentration ◽  
Free Carrier ◽  
Silicon Doping ◽  
Sapphire Substrates ◽  
Uv Emission ◽  
Silicon Doped

AbstractSilicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n=2.5×1018 cm−3.

Atomic layer epitaxy of InAs with high silicon doping concentration

2020 ◽  
Vol 38 (5) ◽  
pp. 052410
Author(s):  
Doron Cohen Elias ◽  
Guy M. Cohen ◽  
David Memram ◽  
Shmuel Saad ◽  
Arnold Bloom ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Silicon Doping ◽  
High Silicon

DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As

1995 ◽  
Vol 24 (7) ◽  
pp. 907-912 ◽  
Author(s):  
G. Medeiros-Ribeiro ◽  
A. G. de Oliveira ◽  
G. M. Ribeiro ◽  
D. A. W. Soares
Keyword(s):  
Energy Level ◽  
Doping Concentration ◽  
Silicon Doping ◽  
Dx Center

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Impact of co-doping concentration in copolymer network liquid crystals

2019 ◽  
Vol 46 (10) ◽  
pp. 1485-1493 ◽  
Author(s):  
Fatemeh Jahanbakhsh ◽  
Alexander Lorenz
Keyword(s):  
Liquid Crystals ◽  
Doping Concentration ◽  
Co Doping ◽  
Copolymer Network

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

scholarly journals Cobalt-doped bioceramic scaffolds fabricated by 3D printing show enhanced osteogenic and angiogenic properties for bone repair

2021 ◽  
Vol 20 (1) ◽  
Author(s):  
Jungang Li ◽  
Chaoqian Zhao ◽  
Chun Liu ◽  
Zhenyu Wang ◽  
Zeming Ling ◽  
...  
Keyword(s):  
Compressive Strength ◽  
3D Printing ◽  
Bone Regeneration ◽  
Doping Concentration ◽  
Artificial Bone ◽  
Bone Defect Repair ◽  
Co Doping ◽  
Defect Repair ◽  
Co Doped

Abstract Background The bone regeneration of artificial bone grafts is still in need of a breakthrough to improve the processes of bone defect repair. Artificial bone grafts should be modified to enable angiogenesis and thus improve osteogenesis. We have previously revealed that crystalline Ca10Li(PO4)7 (CLP) possesses higher compressive strength and better biocompatibility than that of pure beta-tricalcium phosphate (β-TCP). In this work, we explored the possibility of cobalt (Co), known for mimicking hypoxia, doped into CLP to promote osteogenesis and angiogenesis. Methods We designed and manufactured porous scaffolds by doping CLP with various concentrations of Co (0, 0.1, 0.25, 0.5, and 1 mol%) and using 3D printing techniques. The crystal phase, surface morphology, compressive strength, in vitro degradation, and mineralization properties of Co-doped and -undoped CLP scaffolds were investigated. Next, we investigated the biocompatibility and effects of Co-doped and -undoped samples on osteogenic and angiogenic properties in vitro and on bone regeneration in rat cranium defects. Results With increasing Co-doping level, the compressive strength of Co-doped CLP scaffolds decreased in comparison with that of undoped CLP scaffolds, especially when the Co-doping concentration increased to 1 mol%. Co-doped CLP scaffolds possessed excellent degradation properties compared with those of undoped CLP scaffolds. The (0.1, 0.25, 0.5 mol%) Co-doped CLP scaffolds had mineralization properties similar to those of undoped CLP scaffolds, whereas the 1 mol% Co-doped CLP scaffolds shown no mineralization changes. Furthermore, compared with undoped scaffolds, Co-doped CLP scaffolds possessed excellent biocompatibility and prominent osteogenic and angiogenic properties in vitro, notably when the doping concentration was 0.25 mol%. After 8 weeks of implantation, 0.25 mol% Co-doped scaffolds had markedly enhanced bone regeneration at the defect site compared with that of the undoped scaffold. Conclusion In summary, CLP doped with 0.25 mol% Co2+ ions is a prospective method to enhance osteogenic and angiogenic properties, thus promoting bone regeneration in bone defect repair.

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