Nonstandard temperature dependence of the impurity-band hopping Hall mobility

1991 ◽  
Vol 41 (9) ◽  
pp. 847-853 ◽  
Author(s):  
V. Čápek
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Impurity Band

TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Disordered Systems

Impurity-band hopping Hall mobility revisited

1993 ◽  
Vol 5 (45) ◽  
pp. 8545-8556
Author(s):  
V Capek ◽  
L Vodna
Keyword(s):  
Hall Mobility ◽  
Impurity Band

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 401-404 ◽  
Author(s):  
Julien Pernot ◽  
Sylvie Contreras ◽  
Jean Camassel ◽  
Jean-Louis Robert
Keyword(s):  
Relaxation Time ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Hall Mobility ◽  
Hole Concentration ◽  
Detailed Comparison ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
P Type

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

Hall mobility minimum of temperature dependence in polycrystalline silicon

1998 ◽  
Vol 83 (1) ◽  
pp. 292-296 ◽  
Author(s):  
H. Nussbaumer ◽  
F. P. Baumgartner ◽  
G. Willeke ◽  
E. Bucher
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Polycrystalline Silicon

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Temperature dependence of Hall mobility in a single crystal of the organic semiconductor BTQBT

1995 ◽  
Vol 5 (6) ◽  
pp. 861 ◽  
Author(s):  
Kenichi Imaeda ◽  
Yongfang Li ◽  
Yoshiro Yamashita ◽  
Hiroo Inokuchi ◽  
Mizuka Sano
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Organic Semiconductor ◽  
Hall Mobility

Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

1997 ◽  
Vol 82 (8) ◽  
pp. 3832-3835 ◽  
Author(s):  
W. Siegel ◽  
S. Schulte ◽  
C. Reichel ◽  
G. Kühnel ◽  
J. Monecke
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Bulk Gaas
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