Temperature Dependence of the Hall Mobility of Electrons in Glassy 10M NaOH Ice

1971 ◽  
Vol 55 (11) ◽  
pp. 5407-5409 ◽  
Author(s):  
I. Eisele ◽  
L. Kevan
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility

TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Disordered Systems

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 401-404 ◽  
Author(s):  
Julien Pernot ◽  
Sylvie Contreras ◽  
Jean Camassel ◽  
Jean-Louis Robert
Keyword(s):  
Relaxation Time ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Hall Mobility ◽  
Hole Concentration ◽  
Detailed Comparison ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
P Type

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

Hall mobility minimum of temperature dependence in polycrystalline silicon

1998 ◽  
Vol 83 (1) ◽  
pp. 292-296 ◽  
Author(s):  
H. Nussbaumer ◽  
F. P. Baumgartner ◽  
G. Willeke ◽  
E. Bucher
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Polycrystalline Silicon

Temperature dependence of Hall mobility in a single crystal of the organic semiconductor BTQBT

1995 ◽  
Vol 5 (6) ◽  
pp. 861 ◽  
Author(s):  
Kenichi Imaeda ◽  
Yongfang Li ◽  
Yoshiro Yamashita ◽  
Hiroo Inokuchi ◽  
Mizuka Sano
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Organic Semiconductor ◽  
Hall Mobility

Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

1997 ◽  
Vol 82 (8) ◽  
pp. 3832-3835 ◽  
Author(s):  
W. Siegel ◽  
S. Schulte ◽  
C. Reichel ◽  
G. Kühnel ◽  
J. Monecke
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature ◽  
Bulk Gaas

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 713-716 ◽  
Author(s):  
Sarit Dhar ◽  
Ayayi Claude Ahyi ◽  
John R. Williams ◽  
Sei Hyung Ryu ◽  
Anant K. Agarwal
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Inversion Layer ◽  
Hall Measurements ◽  
Temperature Range ◽  
Strong Inversion ◽  
Stark Contrast ◽  
Channel Region

Hall measurements on NO annealed 4H-SiC MOS gated Hall bars are reported in the temperature range 77 K- 423 K. The results indicate higher carrier concentration and lower trapping at increased temperatures, with a clear strong inversion regime at all temperatures. In stark contrast to Si, the Hall mobility increases with temperature for 77 K-373K, above which the mobility decreases slightly. The maximum experimental mobility was found to be ~50 cm2V-1s-1which is only about 10% of the 4H-SiC bulk mobility indicating that while NO annealing drastically improves trapping, it does not improve the mobility significantly. Supporting modeling results strongly suggest the presence of a disordered SiC channel region.

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