Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Temperature dependence effective activation energy in Tl2Ba2CaCu2O8 thin film

2006 ◽  
Vol 243 (6) ◽  
pp. 1314-1320 ◽  
Author(s):  
S. L. Liu ◽  
G. J. Wu ◽  
L. Shan ◽  
J. Wu ◽  
X. B. Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Temperature Dependence ◽  
Effective Activation Energy ◽  
Effective Activation

ACTIVATION ENERGY OF Bi2Sr2Ca(Cu1-xFex)2O8+d THIN FILMS

2001 ◽  
Vol 15 (22) ◽  
pp. 959-964 ◽  
Author(s):  
G. ILONCA ◽  
A. V. POP ◽  
G. STIUFIUC ◽  
C. LUNG ◽  
R. STIUFIUC
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Activation Energy ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Temperature Dependence ◽  
Effective Activation Energy ◽  
Effective Activation ◽  
Plastic Deformations

The scaling behavior of the effective activation energy U(T,H) of epitaxial c-axis oriented Bi 2 Sr 2 Ca ( Cu 1-x Fe x)2 O 8+d thin films with 0 ≤ x ≤ 0.02 has been studied as a function of temperature and magnetic field. It has been found that the activation energy scales as U(H,T) = U0(1 - t)mHn with exponent m = 1.15 ± 0.03 and n = -1/2. The field and temperature dependence of the activation energy, as well as its overall magnitude is consistent with a model in which U(T,H) arises from plastic deformations of viscous flux liquid above the vortex-glass transition temperature.

Tracer Impurity Diffusion in Liquid Metals: In in Gallium and Ga in Indium

1974 ◽  
Vol 29 (6) ◽  
pp. 893-896 ◽  
Author(s):  
P. E. Eriksson ◽  
S. J. Larsson ◽  
A. Lodding
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Effective Activation Energy ◽  
Liquid Metals ◽  
Recent Model ◽  
Impurity Diffusion ◽  
Linear Temperature Dependence ◽  
Effective Activation ◽  
Linear Temperature ◽  
Arrhenius Parameters

Diffusion measurements have been made for 114In in Ga between 20° and 455 °C, and for 72Ga in In between the m.p. and 380 °C. Linear plots of D vs T describe the results about equally well as Arrhenius representations. The Arrhenius parameters are D0 = 2.1 · 10-4 cm2/S, Q = 1.64 kcal/mol for In in Ga, D0 = 2.4 · 10-4 cm2/S, Q = 1.93 kcal/mol for Ga in In. Ga diffuses faster than In in both matrices. The effective activation energy of Ga is much higher than that of In in the lighter solvent, but the opposite is the case in In. Simple electrostatic screening arguments cannot be applied to the latter results. A recent model, predicting a nearly linear temperature dependence of D, appears somewhat better applicable.

MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS

2007 ◽  
Vol 21 (01) ◽  
pp. 127-132
Author(s):  
T. R. YANG ◽  
G. ILONCA ◽  
V. TOMA ◽  
P. BALINT ◽  
M. BODEA
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Activation Energy ◽  
Glass Transition ◽  
Effective Activation Energy ◽  
Epitaxial Thin Films ◽  
Effective Activation ◽  
High Quality ◽  
Plastic Deformations ◽  
Magnetic Resistivity

The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

Correlation between effective activation energy and pre-exponential factor for diffusion in bulk metallic glasses

1999 ◽  
Vol 14 (8) ◽  
pp. 3200-3203 ◽  
Author(s):  
S. K. Sharma ◽  
F. Faupel
Keyword(s):  
Activation Energy ◽  
Metallic Glasses ◽  
Effective Activation Energy ◽  
Bulk Metallic Glasses ◽  
Supercooled Liquid ◽  
The Novel ◽  
Effective Activation ◽  
Exponential Factor ◽  
Liquid States ◽  
Fitting Parameters

The values of effective activation energy (Q) and pre-exponential factor (D0) reported in the literature for diffusion in the novel bulk metallic glasses, both in the glassy and the deeply supercooled liquid regions, are found to follow the same correlation as reported earlier in conventional metallic glasses, namely D0 = A exp(Q/B), where A and B are fitting parameters with values A = 4.8 × 10−19 m2 s−1 and B = 0.056 eV atom−1. A possible explanation for the observed values of A and B is given by combining an activation energy and a free volume term. The interpretation favors a cooperative mechanism for diffusion in the glassy and deeply supercooled liquid states.

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