Hall mobility minimum of temperature dependence in polycrystalline silicon

1998 ◽  
Vol 83 (1) ◽  
pp. 292-296 ◽  
Author(s):  
H. Nussbaumer ◽  
F. P. Baumgartner ◽  
G. Willeke ◽  
E. Bucher
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Polycrystalline Silicon

Temperature Dependence of the Hall Mobility in Polycrystalline Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
S.E. Ready ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Grain Boundaries ◽  
Hall Mobility ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Electrical Characteristics ◽  
Crystal Silicon ◽  
Large Variability ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Crystallization of amorphous silicon thin films by various methods has fostered enhancements in the electrical characteristics over their amorphous counterparts. For example, carrier mobilities ranging from 10 to >100 cm2/V-sec have been reported for laser crystallized films. The rather large variability of the transport characteristics with crystallization processing conditions is not well understood and, as a result, greatly complicates device process debugging. In addition, while it is generally believed that defects inherent in the grain boundaries provide the primary barriers degrading transport properties relative to single crystal silicon, the specific nature of these defects is not known. In this paper, we present data on the temperature dependence of the Hall mobility of thin silicon films crystallized by thermal and excimer laser processing. Hall data for the laser-crystallized phosphorus-doped material show a temperature dependence which differs dramatically from that for thermally crystallized materials, while the effects of hydrogenation are similar, reducing the barriers at the grain boundaries.

TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Disordered Systems

Metastable Defect Kinetics in Hydrogen Passivated Polycrystalline Silicon

1994 ◽  
Vol 336 ◽  
Author(s):  
N. H. Nickel ◽  
R. A. Street ◽  
W. B. Jackson ◽  
N. M. Johnson
Keyword(s):  
Temperature Dependence ◽  
Polycrystalline Silicon ◽  
Direct Evidence ◽  
Slow Cool ◽  
Dark Conductivity ◽  
Active Hydrogen ◽  
Thermally Activated ◽  
Rate Dependent ◽  
Si Films ◽  
Metastable Defect

ABSTRACTThe temperature dependence of the dark conductivity, σD, of unhydrogenated and hydrogen passivated polycrystalline silicon (poly-Si) films was Measured. While σD of unhydrogenated poly-Si did not exhibit any influence of thermal treatment prior to the measurement, striking effects were observed in hydrogenated poly-Si films. Below 268 K a cooling-rate dependent metastable change of σD is observed. The dark conductivity increases by more than 8 orders of magnitude. This frozen-in state is metastable: Annealing and a slow cool restore the temperature dependence of the relaxed state. The time and temperature dependence of the relaxation reveal that this process is thermally activated with 0.74 eV. The lack of the quenching metastability in unhydrogenated poly-Si is direct evidence that the metastable changes in σD are due to the formation and dissociation of an electrically active hydrogen complex, in the grain-boundary regions.

Impact of Grain Boundary Character on Electrical Property in Polycrystalline Silicon

1999 ◽  
Vol 586 ◽  
Author(s):  
Shu Hamada ◽  
Koichi Kawahara ◽  
Sadahiro Tsurekawa ◽  
Tadao Watanabe ◽  
Takashi Sekiguchi
Keyword(s):  
Electrical Activity ◽  
Temperature Dependence ◽  
Grain Boundaries ◽  
Band Gap ◽  
Misorientation Angle ◽  
Polycrystalline Silicon ◽  
Dominant Role ◽  
Localized States ◽  
Localized State ◽  
The Difference

ABSTRACTGrain boundaries in polycrystalline silicon are most likely to generate localized states in band gap. The localized states play a dominant role in determining the performance of solar cells by acting as traps or recombination center of carriers. In the present investigation, the scanning electron microscope - electron channeling pattern(SEM/ECP) method and SEM - electron back scattered diffraction pattern(SEM/EBSD) technique were applied to characterize the grain boundaries in p-type polycrystalline silicon with 99.999%(5N) in purity. Thereafter, temperature dependence of electrical activity of individual grain boundaries was measured by an electron beam induced current(EBIC) technique.It has been found that temperature dependence of EBIC contrast at grain boundaries can change, depending on the misorientation angle the orientation of the boundary plane. The results can be explained by the difference in the position of the localized state within the band gap on the basis of the Shockley-Read-Hall statistics. The {111} ∑3 symmetrical tilt boundary has shallow states, while high ∑ boundaries have deep states. Low angle boundaries reveal high electrical activities. The EBIC contrast at low angle boundaries was found to increase with increasing misorientation angle up to 2° followed by an almost constant value. High electrical activity at low angle boundaries is probably attributed to a stress field of primary dislocations forming low angle boundaries.

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 401-404 ◽  
Author(s):  
Julien Pernot ◽  
Sylvie Contreras ◽  
Jean Camassel ◽  
Jean-Louis Robert
Keyword(s):  
Relaxation Time ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Hall Mobility ◽  
Hole Concentration ◽  
Detailed Comparison ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
P Type

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

Sign in / Sign up

Export Citation Format

Share Document