Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon‐germanium alloys

1992 ◽  
Vol 71 (9) ◽  
pp. 4341-4343 ◽  
Author(s):  
R. Kishore ◽  
P. Prakash ◽  
S. N. Singh ◽  
B. K. Das
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Silicon Germanium ◽  
Floating Zone ◽  
Bulk Silicon ◽  
Silicon Germanium Alloys

TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Disordered Systems

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

2013 ◽  
Vol 16 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
A. Belafhaili ◽  
L. Laânab ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
A. Claverie
Keyword(s):  
Ion Implantation ◽  
Silicon Germanium ◽  
Germanium Content ◽  
Silicon Germanium Alloys

Femtosecond spectroscopy in amorphous silicon and silicon-germanium alloys

1987 ◽  
Vol 97-98 ◽  
pp. 145-148 ◽  
Author(s):  
P.M. Fauchet ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
J.P. Conde ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Femtosecond Spectroscopy ◽  
Silicon Germanium Alloys

Oxidation of silicon–germanium alloys. I. An experimental study

1997 ◽  
Vol 82 (11) ◽  
pp. 5773-5778 ◽  
Author(s):  
P.-E. Hellberg ◽  
S.-L. Zhang ◽  
F. M. d’Heurle ◽  
C. S. Petersson
Keyword(s):  
Experimental Study ◽  
Silicon Germanium ◽  
Silicon Germanium Alloys
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