Influence of the charge of surface states on the characteristics of mis transistors made of p-type indium antimonide

1980 ◽  
Vol 23 (4) ◽  
pp. 348-352
Author(s):  
O. V. Kosogov ◽  
G. D. Lapin
Keyword(s):  
Indium Antimonide ◽  
Surface States ◽  
P Type

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

Topological phase and thermoelectric properties of bialkali bismuthide compounds (Na,K)2RbBi from first-principles

2021 ◽  
Author(s):  
Shahram Yalameha ◽  
Zahra Nourbakhsh ◽  
Daryoosh Vashaee
Keyword(s):  
Density Functional ◽  
Transport Coefficients ◽  
Relaxation Times ◽  
Surface States ◽  
Topological Phase ◽  
Boltzmann Transport ◽  
Thermoelectric Power Factor ◽  
Practical Applications ◽  
Wide Range ◽  
P Type

Abstract We report the topological phase, thermal, and electrical properties of bialkali bismuthide compounds (Na,K)2RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states and Z2 topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable thermoelectric power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures.

Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States

2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type ◽  
Silicon Based

Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

2008 ◽  
Vol 34 (3) ◽  
pp. 241-243 ◽  
Author(s):  
N. N. Zaveryukhina ◽  
E. B. Zaveryukhina ◽  
S. I. Vlasov ◽  
B. N. Zaveryukhin
Keyword(s):  
Energy Spectrum ◽  
Single Crystals ◽  
Surface States ◽  
Type Silicon ◽  
P Type

On the Spectra of Impurity Photoconductivity of n- and p-Type Indium Antimonide at Low Temperatures

1969 ◽  
Vol 31 (2) ◽  
pp. 499-505 ◽  
Author(s):  
I. M. Ismailov ◽  
D. N. Nasledov ◽  
Yu. S. Smetannikova
Keyword(s):  
Indium Antimonide ◽  
Low Temperatures ◽  
Impurity Photoconductivity ◽  
P Type

Lateral photovoltaic effect in p-type silicon induced by surface states

2017 ◽  
Vol 110 (12) ◽  
pp. 121103 ◽  
Author(s):  
Xu Huang ◽  
Chunlian Mei ◽  
Zhikai Gan ◽  
Peiqi Zhou ◽  
Hui Wang
Keyword(s):  
Photovoltaic Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type
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