Optical constants of p-type indium antimonide in the intrinsic absorption region

1969 ◽  
Vol 11 (4) ◽  
pp. 1270-1271
Author(s):  
I. M. Nesmelova ◽  
P. S. Matveeva
Keyword(s):  
Indium Antimonide ◽  
Optical Constants ◽  
Absorption Region ◽  
Intrinsic Absorption ◽  
P Type

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

On the Spectra of Impurity Photoconductivity of n- and p-Type Indium Antimonide at Low Temperatures

1969 ◽  
Vol 31 (2) ◽  
pp. 499-505 ◽  
Author(s):  
I. M. Ismailov ◽  
D. N. Nasledov ◽  
Yu. S. Smetannikova
Keyword(s):  
Indium Antimonide ◽  
Low Temperatures ◽  
Impurity Photoconductivity ◽  
P Type
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