Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

1983 ◽  
Vol 31 (3) ◽  
pp. 147-152 ◽  
Author(s):  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Annealing ◽  
Deep Levels ◽  
Transient Thermal ◽  
Ion Implanted

scholarly journals THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS

1968 ◽  
Vol 13 (9) ◽  
pp. 295-297 ◽  
Author(s):  
R. G. Hunsperger ◽  
O. J. Marsh ◽  
C. A. Mead
Keyword(s):  
Deep Levels ◽  
Ion Implanted

Pulsed thermal annealing of ion‐implanted silicon

1983 ◽  
Vol 54 (5) ◽  
pp. 2413-2418 ◽  
Author(s):  
P. D. Scovell ◽  
E. J. Spurgin
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

scholarly journals Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

1997 ◽  
Vol 81 (7) ◽  
pp. 3143-3150 ◽  
Author(s):  
L. Quintanilla ◽  
S. Dueñas ◽  
E. Castán ◽  
R. Pinacho ◽  
J. Barbolla ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

2006 ◽  
pp. 847-850
Author(s):  
Jaime A. Freitas ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

1993 ◽  
Vol 63 (8) ◽  
pp. 1125-1127 ◽  
Author(s):  
N. Yu ◽  
K. B. Ma ◽  
C. Kirschbaum ◽  
K. Varahramyan ◽  
W. K. Chu
Keyword(s):  
Thermal Annealing ◽  
Electrical Activation ◽  
Ion Implanted
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