The effect of thermal annealing on the grain size and electrical characteristics of arsenic ion‐implanted and laser‐irradiated polycrystalline silicon films

1981 ◽  
Vol 52 (9) ◽  
pp. 5566-5574 ◽  
Author(s):  
Kenji Shibata ◽  
Shinji Onga
Keyword(s):  
Grain Size ◽  
Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Electrical Characteristics ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Grain Growth Processes during Transient Annealing of As-Implanted, Polycrystalline-Silicon Films

1984 ◽  
Vol 35 ◽  
Author(s):  
S.J. Krause ◽  
S.R. Wilson ◽  
W.M. Paulson ◽  
R.B. Gregory
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Average Diameter ◽  
Silicon Films ◽  
Growth Processes ◽  
Cross Sectional ◽  
Polycrystalline Silicon Films ◽  
Equiaxed Grains

ABSTRACTPolycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid thermal annealer. Transmission electron microscopy was used to study through-thickness and cross sectional views of grain size and morphology of as-deposited and of transient annealed films. A bimoda] distribution of grain sizes was present in as-deposited polycrystalline silicon films. The first population was due to columnar growth of some grains to a final average diameter of 20 rm. The second population of small equiaxed grains of 5 nm average diameter were formed early in the deposition process. During transient annealing grains in the first population grew rapidly up to 280-nm equiaxed grains. After this the growth rate decreased due to the grain size reaching the thickness of the film. Grains in the second population grew rapidly up to a size of 150 nm, after which the growth rate was lowered due to grains impinging upon one another. The grain growth processes for both populations have been described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times characteristic of transient annealing processes.

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

1983 ◽  
Vol 26 (7) ◽  
pp. 657-665 ◽  
Author(s):  
Ruey-Shing Huang ◽  
Chin-Hsiung Cheng ◽  
J.C. Liu ◽  
M.K. Lee ◽  
C.T. Chen
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Electrical Measurements ◽  
Polycrystalline Silicon Films ◽  
Ion Implanted

Structural Changes During Transient Post-Annealing of Preannealed and Arsenic Implanted Polycrystalline Silicon Films

1985 ◽  
Vol 52 ◽  
Author(s):  
S. J. Krause ◽  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson ◽  
J. A. Leavitt ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Sheet Resistance ◽  
Network Structure ◽  
Cellular Network ◽  
Polycrystalline Silicon ◽  
Structural Changes ◽  
Silicon Films ◽  
Post Annealing ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films were transient preannealed, As implanted, and transient post-annealed at peak temperatures up to 1250°C for times up to 17.5 seconds. Structural changes occurring during post-annealing were examined by transmission electron microscopy. These results were correlated to Rutherford Backscattering and sheet resistance results. The grain size, which increased from 5–20 to 150–300 nm during preannealing, did not increase during post-annealing. During early stages of post-annealing, As diffused along grain boundaries and generated dislocation sources at grain boundary surfaces. Subsequently, as annealing progressed, a fine, As-rich cellular network structure propagated into the grains until the structure of an entire grain was transformed into a fine cellular network at the longest annealing times. Residual stresses in the film were relieved during formation of the network structure. The sheet resistance of preannealed samples, in comparison with non-preannealed samples with similar implantation and final transient anneals, was lower at shorter annealing times due to the larger grain size, which increased mobility, and the reduced grain boundary area, which trapped less As. It was also lower at longer annealing times due to the formation of the cellular network structure. In subsequent furnace stability tests for 30 minutes at 700–900°C, the sheet resistance increased less for preannealed than for non-preannealed samples.

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