Manufacturability issues related to transient thermal annealing of titanium silicide films in a rapid thermal processor

1991 ◽  
Vol 4 (1) ◽  
pp. 1-8 ◽  
Author(s):  
K. Shenai
Keyword(s):  
Thermal Annealing ◽  
Titanium Silicide ◽  
Transient Thermal

Oxygen behavior during titanium silicide formation by rapid thermal annealing

1987 ◽  
Vol 62 (10) ◽  
pp. 4319-4321 ◽  
Author(s):  
R. Pantel ◽  
D. Levy ◽  
D. Nicolas ◽  
J. P. Ponpon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation

Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

2016 ◽  
Vol 49 (17) ◽  
pp. 6462-6470 ◽  
Author(s):  
Alan G. Jacobs ◽  
Clemens Liedel ◽  
Hui Peng ◽  
Linxi Wang ◽  
Detlef-M. Smilgies ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Thermal Annealing ◽  
Phase Segregation ◽  
Transient Thermal ◽  
Kinetics Of

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

Formation of titanium silicide during rapid thermal annealing: Influence of oxygen

1992 ◽  
Vol 72 (2) ◽  
pp. 815-817 ◽  
Author(s):  
F. Richter ◽  
E. Bugiel ◽  
H. B. Erzgräber ◽  
D. Panknin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide

scholarly journals Thermal Diffusion in Fibrous Aerogel Blankets

Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 823 ◽  
Author(s):  
Ákos Lakatos ◽  
Anton Trník
Keyword(s):  
Thermal Properties ◽  
Thermal Annealing ◽  
Thermal Insulation ◽  
Sol Gel ◽  
Theoretical Background ◽  
Design Stage ◽  
Scanning Calorimetry ◽  
Insulation Materials ◽  
Sol Gel Process ◽  
Transient Thermal

Nowadays, the usage of thermal insulation materials is widespread not only in the building sector but also in the vehicle industry. The application of fibrous or loose-fill insulation materials like glass wool or mineral wool as well as aerogel is well known. Aerogel-based materials are among the best solid materials for thermal insulation available today; they are prepared through a sol–gel process. For building walls, the glass-fiber-enhanced types are the frequently used ones. They are prepared by adding the liquid–solid solution to the fibrous batting, which is called a sol–gel process. In the present paper, the changes in the most important building physical properties of aerogel blankets after thermal annealing are presented. The samples were subjected to isochronal heat treatments from 70 to 210 °C for 24 h. The changes in the thermal conductivity were followed by Holometrix Lambda heat flow meter, and differential scanning calorimetry results were also recorded. From the measured values, together with the densities, the most important thermal properties were calculated, such as thermal resistance, diffusivity, effusivity (heat absorption), and thermal inertia. In this paper, we attempt to clarify the role played by thermal annealing in the transient thermal properties of aerogel materials. Besides presenting the measurement results, a theoretical background is given. The investigations of not only the steady-state but also the transient thermal parameters of the materials are momentous at the design stage.

Effect of Pre-cooling Treatment on the Formation of C54 Phase Titanium Silicide

2001 ◽  
Vol 670 ◽  
Author(s):  
Lin Zhangand ◽  
YongKeun Lee
Keyword(s):  
Structural Analysis ◽  
Grain Boundaries ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Triple Junction ◽  
Film Growth ◽  
Titanium Silicide ◽  
Silicide Film ◽  
Low Resistivity

ABSTRACTIn this paper, the effect of pre-cooling treatment on the low resistivity C54 phase titanium silicide film growth was investigated. Our experimental results and micro-structural analysis show that, by introducing such cooling treatment into the titanium silicide process to precede the conventional rapid thermal annealing, the low resistivity C54 phase formation can be enhanced. Defects at the Si/Ti interface caused by the thermal mismatch between titanium and silicon layers during the cooling treatment were found to contribute to the increase of the C49 nucleus sites. This help to supply more C49 grain boundaries and triple junction sites at which the C54 phase could nucleate. This discovery has the potential to reduce the complexity and cost associated with forming low resistivity titanium silicide on sub-micron structures for future ULSI application.

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