scholarly journals Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

1997 ◽  
Vol 81 (7) ◽  
pp. 3143-3150 ◽  
Author(s):  
L. Quintanilla ◽  
S. Dueñas ◽  
E. Castán ◽  
R. Pinacho ◽  
J. Barbolla ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Deep levels in undoped bulk InP after rapid thermal annealing

1990 ◽  
Vol 68 (4) ◽  
pp. 1665-1668 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Ju Hoon Yoon ◽  
Suk‐Ki Min ◽  
Young Lae Jung ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon

1991 ◽  
Vol 70 (6) ◽  
pp. 3109-3114 ◽  
Author(s):  
C. A. Dimitriadis ◽  
E. K. Polychroniadis ◽  
E. K. Evangelou ◽  
G. E. Giakoumakis
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Platinum Silicide

A Study of Annealing Behavior of EL2 and EL6 Groups in SI-GaAs

1996 ◽  
Vol 421 ◽  
Author(s):  
Wu Fengmei ◽  
Zhao Zhouying
Keyword(s):  
Thermal Annealing ◽  
Conduction Band ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Furnace Annealing ◽  
Annealing Behavior ◽  
Break Up ◽  
Transient Spectroscopy

AbstractWe present annealing behavior for EL2 and EL6 groups as dominant deep levels in semiinsulating GaAs using Photo Induced Transient Spectroscopy (PITS) measurement. During rapid thermal annealing, a relation has been identified between EL2 group at 0.79 and 0.82 eV and EL6 group at 0.24, 0.27 and 0.82 eV below the conduction band. It is found that they may be close in structure, and belong to the EL2 and EL6 groups, respectively. In rapidly annealed samples, the quantity of all defects in the EL2 group increases, while that in the EL6 group decreases. However, by furnace annealing at 950°C for 5 hours, some of the defects in the EL2 group break up, and the quantity of all defects in the EL6 group increases. It is suggested that the EL2 group and EL6 group are related in their microscopy structures. We then discuss a relation between the two groups and their origins.

Deep levels in GaAs grown on Si during rapid thermal annealing

1990 ◽  
Vol 56 (8) ◽  
pp. 761-763 ◽  
Author(s):  
Hoon Young Cho ◽  
Eun Kyu Kim ◽  
Yong Kim ◽  
Suk‐Ki Min ◽  
Ju Hoon Yoon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing

1997 ◽  
Vol 470 ◽  
Author(s):  
Zhao Zhouying ◽  
Wu Fengmai ◽  
Li Ningsheng
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level ◽  
Thermal Conversion ◽  
Deep Levels ◽  
Hall Measurement ◽  
Induced Current ◽  
Shallow Acceptor ◽  
Transient Spectroscopy

ABSTRACTDeep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA). The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C. Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion. The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer. Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.

Effects of Rapid Thermal Annealing on Deep Levels inn-GaInP

2004 ◽  
Vol T114 ◽  
pp. 9-11 ◽  
Author(s):  
A Tukiainen ◽  
J Dekker ◽  
N Xiang ◽  
M Pessa
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Defect States in GaAs after Rapid Thermal Annealing

1985 ◽  
Vol 46 ◽  
Author(s):  
R. A. Street ◽  
N. M. Johnson ◽  
R. D. Burnham
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Luminescence Spectra ◽  
Defect States ◽  
Type Conversion ◽  
Annealing Temperatures ◽  
Luminescence Peak ◽  
Capacitance Voltage ◽  
Anneal Temperature

AbstractElectronic deep levels in GaAs have been investigated by correlated luminescence and DLTS measurements on material in which the defects were systematically perturbed by rapid thermal annealing. The samples were grown by MOCVD and encapsulated with silicon nitride. Annealing was performed at temperatures from 800°C to 950°C for 5 seconds. The luminescence spectra were measured from 0.7 to 1.6 eV at temperatures from 4-80 K and have features at 0.97, 1.17, 1.35, 1.40 and 1.5 eV. The band-to-acceptor luminescence shows the formation of Si acceptors, starting at an anneal temperature of about 850°C. The luminescence peak at 1,35 eV, attributed to As vacancy - acceptor complexes, is observed to increase in intensity with higher annealing temperatures. In contrast, the Ga vacancy-donor complex peak at 1,17 eV decreases in intensity. DLTS data show an increase in the density of deep levels and new levels not present in the unannealed material. Capacitance-voltage data find a reduction in carrier concentration, although type conversion is not observed even after annealing to 950°C.

scholarly journals Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Simeon Simeonov ◽  
Anna Szekeres ◽  
Dencho Spassov ◽  
Mihai Anastasescu ◽  
Ioana Stanculescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Transport Mechanism ◽  
Rf Magnetron Sputtering ◽  
Deep Levels ◽  
Nitrogen Doped ◽  
Doped Zno

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

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