Pulsed thermal annealing of ion‐implanted silicon

1983 ◽  
Vol 54 (5) ◽  
pp. 2413-2418 ◽  
Author(s):  
P. D. Scovell ◽  
E. J. Spurgin
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

2006 ◽  
pp. 847-850
Author(s):  
Jaime A. Freitas ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

1993 ◽  
Vol 63 (8) ◽  
pp. 1125-1127 ◽  
Author(s):  
N. Yu ◽  
K. B. Ma ◽  
C. Kirschbaum ◽  
K. Varahramyan ◽  
W. K. Chu
Keyword(s):  
Thermal Annealing ◽  
Electrical Activation ◽  
Ion Implanted

scholarly journals Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

2016 ◽  
Vol 432 ◽  
pp. 183-188 ◽  
Author(s):  
D.A. Zatsepin ◽  
A.F. Zatsepin ◽  
D.W. Boukhvalov ◽  
E.Z. Kurmaev ◽  
Z.V. Pchelkina ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Thermal Annealing ◽  
Silica Glass ◽  
Photoluminescence Properties ◽  
Before And After ◽  
Ion Implanted

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Sign in / Sign up

Export Citation Format

Share Document