Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-189-Pr3-196
Author(s):  
L. Zambov ◽  
B. Caussat ◽  
R. Boubeker ◽  
J.-P. Couderc
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Film Formation ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Kinetics Of

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Vacuum ◽  
2021 ◽  
Vol 189 ◽  
pp. 110253
Author(s):  
Yujia Jiao ◽  
Qian Jiang ◽  
Junhua Meng ◽  
Jinliang Zhao ◽  
Zhigang Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems

2003 ◽  
Vol 93 ◽  
pp. 453-458 ◽  
Author(s):  
H. Mahfoz-Kotb ◽  
A.C. Salaün ◽  
T. Mohammed-Brahim ◽  
F. Bendriaa ◽  
F. Le Bihan ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Films ◽  
Pressure Chemical

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Substrates ◽  
Phosphorus Doping ◽  
Forward Current ◽  
Pressure Chemical ◽  
Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

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