Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process

2014 ◽  
pp. 57-103 ◽  
Author(s):  
Alain Bravaix ◽  
Vincent Huard ◽  
Florian Cacho ◽  
Xavier Federspiel ◽  
David Roy
Keyword(s):  
Degradation Process ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Hot Carrier Degradation

Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach

2017 ◽  
Vol 38 (2) ◽  
pp. 160-163 ◽  
Author(s):  
Prateek Sharma ◽  
Stanislav Tyaginov ◽  
Stewart E. Rauch ◽  
Jacopo Franco ◽  
Alexander Makarov ◽  
...  
Keyword(s):  
Drift Diffusion ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Hot Carrier Degradation

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1427-1432 ◽  
Author(s):  
P. Sharma ◽  
S. Tyaginov ◽  
Y. Wimmer ◽  
F. Rudolf ◽  
K. Rupp ◽  
...  
Keyword(s):  
Distribution Function ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Function Models ◽  
Hot Carrier Degradation

Hot carrier degradation modeling of short-channel n-FinFETs

2015 ◽  
Author(s):  
I. Messaris ◽  
N. Fasarakis ◽  
T. A. Karatsori ◽  
A. Tsormpatzoglou ◽  
G. Ghibaudo ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Hot Carrier Degradation

Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

2017 ◽  
Vol 64 (3) ◽  
pp. 923-929 ◽  
Author(s):  
Hamed Kamrani ◽  
Dominic Jabs ◽  
Vincenzo d'Alessandro ◽  
Niccolo Rinaldi ◽  
Thomas Jacquet ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Hot Carrier Degradation

Bias and 1/f Noise Degradation Modeling of 90 nm n-Channel MOSFETs Induced by Hot Carrier Stress

2016 ◽  
Vol 698 ◽  
pp. 100-108
Author(s):  
Takuya Totsuka ◽  
Hitoshi Aoki ◽  
Fumitaka Abe ◽  
Yukiko Arai ◽  
Shunichiro Todoroki ◽  
...  
Keyword(s):  
Drain Current ◽  
Measured Data ◽  
Noise Measurement ◽  
Noise Voltage ◽  
Model Parameters ◽  
Noise Parameter ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Simulation Results ◽  
Hot Carrier Degradation

The goal of this research is to model the drain current and 1/f noise degradation characteristics of n-channel MOSFETs. In this paper, we present the implementation of hot carrier degradation into drain current equations of BSIM4 model. We show simulation results of the DC drain current degradation, and then 1/f noise voltage density simulation results affected by the drain current degradation. We have extracted BSIM4 model parameters extensively with the measured data including I-V and 1/f noise measurement of our TEGs. Especially for 1/f noise degradation characterizations, the input referred noise has been calculated after extracting the 1/f noise parameter degradations.

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