gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_182 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Gallium Arsenide ◽

Defect States ◽

Deep Defect ◽

Gallium Arsenide Antimonide

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gallium arsenide (GaAs), intrinsic or unidentified deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_95 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Defect States ◽

Deep Defect

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gallium arsenide (GaAs), radiation-induced deep defect states: hole traps induced by electron irradiation

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_101 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Arsenide ◽

Electron Irradiation ◽

Defect States ◽

Deep Defect ◽

Radiation Induced

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gallium arsenide (GaAs), radiation-induced deep defect states: electron traps induced by electron irradiation

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_100 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Arsenide ◽

Electron Irradiation ◽

Defect States ◽

Electron Traps ◽

Deep Defect ◽

Radiation Induced

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gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_180 ◽

2005 ◽

pp. 1-21

Author(s):

Keyword(s):

Gallium Arsenide ◽

Defect States ◽

Deep Defect ◽

Gallium Arsenide Phosphide

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Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

Materials Science and Engineering B ◽

10.1016/s0921-5107(02)00026-0 ◽

2002 ◽

Vol 93 (1-3) ◽

pp. 85-89 ◽

Cited By ~ 2

Author(s):

A Krtschil ◽

A Kielburg ◽

H Witte ◽

A Krost ◽

J Christen ◽

...

Keyword(s):

Electrical Characterization ◽

Defect States ◽

Deep Defect

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gallium nitride (GaN), properties of deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_23 ◽

2005 ◽

pp. 1-7

Author(s):

Keyword(s):

Gallium Nitride ◽

Defect States ◽

Deep Defect

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boron phosphide (BP), deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_18 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Defect States ◽

Deep Defect ◽

Boron Phosphide

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Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG

Chemistry of Materials ◽

10.1021/acs.chemmater.0c02449 ◽

2020 ◽

Author(s):

Christopher Linderälv ◽

Daniel Åberg ◽

Paul Erhart

Keyword(s):

Oxygen Vacancies ◽

Luminescence Quenching ◽

Defect States ◽

Deep Defect ◽

Recombination Pathway

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Deep defect states in a-Si:(H,C) alloys

Materials Chemistry and Physics ◽

10.1016/0254-0584(95)01597-n ◽

1996 ◽

Vol 43 (1) ◽

pp. 19-24

Author(s):

Shu-Ya Lin

Keyword(s):

Defect States ◽

Deep Defect

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Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method

Journal of Applied Physics ◽

10.1063/1.350818 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4344-4353 ◽

Cited By ~ 23

Author(s):

I. Sakata ◽

M. Yamanaka ◽

S. Numase ◽

Y. Hayashi

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Defect States ◽

Deep Defect ◽

Hydrogenated Amorphous

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