gallium arsenide antimonide Latest Research Papers

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.11.023 ◽

2015 ◽

Vol 31 ◽

pp. 52-55 ◽

Cited By ~ 3

Author(s):

D.M. Hurtado-Castañeda ◽

J.L. Herrera-Pérez ◽

J.S. Arias-Cerón ◽

C. Reyes-Betanzo ◽

P. Rodriguez-Fragoso ◽

...

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Electrical Characterization ◽

Optical Response ◽

Gallium Arsenide Antimonide ◽

Indium Gallium

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Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity

Applied Optics ◽

10.1364/ao.52.008432 ◽

2013 ◽

Vol 52 (35) ◽

pp. 8432 ◽

Cited By ~ 11

Author(s):

Sangjo Choi ◽

Kamal Sarabandi

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Infrared Detector ◽

Enhanced Sensitivity ◽

Gallium Arsenide Antimonide ◽

Indium Gallium

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gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_182 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Gallium Arsenide ◽

Defect States ◽

Deep Defect ◽

Gallium Arsenide Antimonide

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GALLIUM ARSENIDE ANTIMONIDE (GaAs1−xSbx)

Handbook Series on Semiconductor Parameters ◽

10.1142/9789812832085_0005 ◽

1996 ◽

pp. 111-131

Author(s):

A. Ya. Vul'

Keyword(s):

Gallium Arsenide ◽

Gallium Arsenide Antimonide

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ChemInform Abstract: REDUCTION OF THE DISLOCATION DENSITY IN GALLIUM ARSENIDE ANTIMONIDE (GAAS1-XSBX) LAYER ON GALLIUM ARSENIDE GROWN BY AN IMPROVED LPE METHOD

Chemischer Informationsdienst ◽

10.1002/chin.198032002 ◽

1980 ◽

Vol 11 (32) ◽

Author(s):

Y. NISHITANI ◽

K. AKITA ◽

A. YAMAGUCHI ◽

T. KOTANI

Keyword(s):

Gallium Arsenide ◽

Dislocation Density ◽

Gallium Arsenide Antimonide

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Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates

Journal of Applied Physics ◽

10.1063/1.324558 ◽

1978 ◽

Vol 49 (12) ◽

pp. 5920-5923 ◽

Cited By ~ 13

Author(s):

Clifton G. Fonstad ◽

Maurice Quillec ◽

Stephen Garone

Keyword(s):

Gallium Arsenide ◽

Gallium Arsenide Antimonide ◽

Inp Substrates ◽

Lattice Matched

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ChemInform Abstract: THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1-YAS1-XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP

Chemischer Informationsdienst ◽

10.1002/chin.197842002 ◽

1978 ◽

Vol 9 (42) ◽

Author(s):

R. E. NAHORY ◽

M. A. POLLACK ◽

E. D. BEEBE ◽

J. C. DEWINTER ◽

M. ILEGEMS

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Aluminum Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Miscibility Gap ◽

Strain Effects ◽

Gallium Arsenide Antimonide

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Silicon‐doped gallium arsenide antimonide electroluminescent diodes emitting to 1.06 μm

Journal of Applied Physics ◽

10.1063/1.322099 ◽

1975 ◽

Vol 46 (8) ◽

pp. 3678-3680 ◽

Cited By ~ 12

Author(s):

S. K. Brierley ◽

C. G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Gallium Arsenide Antimonide ◽

Silicon Doped

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gallium arsenide antimonide
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Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity

gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states

GALLIUM ARSENIDE ANTIMONIDE (GaAs1−xSbx)

ChemInform Abstract: REDUCTION OF THE DISLOCATION DENSITY IN GALLIUM ARSENIDE ANTIMONIDE (GAAS1-XSBX) LAYER ON GALLIUM ARSENIDE GROWN BY AN IMPROVED LPE METHOD

Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates

ChemInform Abstract: THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1-YAS1-XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP

Silicon‐doped gallium arsenide antimonide electroluminescent diodes emitting to 1.06 μm

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gallium arsenide antimonideRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity

gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states

GALLIUM ARSENIDE ANTIMONIDE (GaAs1−xSbx)

ChemInform Abstract: REDUCTION OF THE DISLOCATION DENSITY IN GALLIUM ARSENIDE ANTIMONIDE (GAAS1-XSBX) LAYER ON GALLIUM ARSENIDE GROWN BY AN IMPROVED LPE METHOD

Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates

ChemInform Abstract: THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1-YAS1-XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP

Silicon‐doped gallium arsenide antimonide electroluminescent diodes emitting to 1.06 μm

gallium arsenide antimonide
Recently Published Documents