boron phosphide (BP), deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_18 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Defect States ◽

Deep Defect ◽

Boron Phosphide

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Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

Materials Science and Engineering B ◽

10.1016/s0921-5107(02)00026-0 ◽

2002 ◽

Vol 93 (1-3) ◽

pp. 85-89 ◽

Cited By ~ 2

Author(s):

A Krtschil ◽

A Kielburg ◽

H Witte ◽

A Krost ◽

J Christen ◽

...

Keyword(s):

Electrical Characterization ◽

Defect States ◽

Deep Defect

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gallium nitride (GaN), properties of deep defect states

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_23 ◽

2005 ◽

pp. 1-7

Author(s):

Keyword(s):

Gallium Nitride ◽

Defect States ◽

Deep Defect

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Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG

Chemistry of Materials ◽

10.1021/acs.chemmater.0c02449 ◽

2020 ◽

Author(s):

Christopher Linderälv ◽

Daniel Åberg ◽

Paul Erhart

Keyword(s):

Oxygen Vacancies ◽

Luminescence Quenching ◽

Defect States ◽

Deep Defect ◽

Recombination Pathway

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Deep defect states in a-Si:(H,C) alloys

Materials Chemistry and Physics ◽

10.1016/0254-0584(95)01597-n ◽

1996 ◽

Vol 43 (1) ◽

pp. 19-24

Author(s):

Shu-Ya Lin

Keyword(s):

Defect States ◽

Deep Defect

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Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method

Journal of Applied Physics ◽

10.1063/1.350818 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4344-4353 ◽

Cited By ~ 23

Author(s):

I. Sakata ◽

M. Yamanaka ◽

S. Numase ◽

Y. Hayashi

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Defect States ◽

Deep Defect ◽

Hydrogenated Amorphous

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Single-photon tunneling in photonic crystals with deep defect states

Optics Letters ◽

10.1364/ol.28.000093 ◽

2003 ◽

Vol 28 (2) ◽

pp. 93

Author(s):

Igor I. Smolyaninov ◽

Anatoly V. Zayats

Keyword(s):

Photonic Crystals ◽

Single Photon ◽

Defect States ◽

Deep Defect ◽

Photon Tunneling

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Recombination dynamics of deep defect states in zinc oxide nanowires

Nanotechnology ◽

10.1088/0957-4484/20/17/175706 ◽

2009 ◽

Vol 20 (17) ◽

pp. 175706 ◽

Cited By ~ 26

Author(s):

S Lettieri ◽

L Santamaria Amato ◽

P Maddalena ◽

E Comini ◽

C Baratto ◽

...

Keyword(s):

Zinc Oxide ◽

Zinc Oxide Nanowires ◽

Defect States ◽

Oxide Nanowires ◽

Deep Defect ◽

Recombination Dynamics

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Ab InitioStudy of Deep Defect States in Narrow Band-Gap Semiconductors: Group III Impurities in PbTe

Physical Review Letters ◽

10.1103/physrevlett.96.056403 ◽

2006 ◽

Vol 96 (5) ◽

Cited By ~ 108

Author(s):

Salameh Ahmad ◽

Khang Hoang ◽

S. D. Mahanti

Keyword(s):

Band Gap ◽

Narrow Band ◽

Defect States ◽

Group Iii ◽

Deep Defect ◽

Narrow Band Gap Semiconductors

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Electronic Structure of Defects in SnTe

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.701.125 ◽

2013 ◽

Vol 701 ◽

pp. 125-130

Author(s):

Salameh Ahmad

Keyword(s):

Electronic Structure ◽

Band Gap ◽

Valence Band ◽

Fundamental Difference ◽

Density Of State ◽

Defect States ◽

Deep Defect ◽

Conduction Bands ◽

Resonant States ◽

Structure Calculations

Myab initioelectronic structure calculations inRSn2n-1Te2n, n=16, R = a vacancy, Cd, and In show that when Sn atom is substituted by R, the Density of State (DOS) of the valence and conduction bands get strongly perturbed. There are significant changes near the band gap region. Sn vacancy causes very little change near the bottom of the conduction band DOS whereas there is an increase in the DOS near the top of the valence band. Results for In impurity shows that, unlike PbTe, the deep defect states in SnTe are resonant states near the top of the valence band. In PbTe these deep defect states lie in the band-gap region (act asn-type). This fundamental difference in the position of the deep defect states in SnTe and PbTe explains the experimental anomalies seen in the case of In impurities (act asn-type in PbTe andp-type in SnTe).

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