Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN

2004 ◽  
Vol 831 ◽  
Author(s):  
Michael R. Hogsed ◽  
Mo Ahoujja ◽  
Mee-Yi Ryu ◽  
Yung Kee Yeo ◽  
James C. Petrosky ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Deep Level ◽  
Removal Rate ◽  
Variable Temperature ◽  
Near Band Edge ◽  
Electron Traps ◽  
Radiation Induced ◽  
Transient Spectroscopy

ABSTRACTThe optical and electrical properties of Si doped GaN and Al0.20Ga0.80N films irradiated with 1 MeV electrons at a fluence of 1×1017 cm−2 are investigated using cathodoluminescence (CL), variable-temperature Hall-effect, and deep level transient spectroscopy (DLTS) measurements. The CL spectra measured at 6 K show peak luminescence intensity of the near band edge decreases, on average, by 50% after electron irradiation, indicating the creation of non-radiative recombination centers which are stable at room temperature. At room temperature, the free carrier concentration decreases significantly in both the GaN and AlGaN samples following the irradiation, and the carrier removal rate depends strongly on the initial carrier concentration. DLTS measurements show three electron traps in the as-grown Al0.20Ga0.80N. Following 1 MeV electron irradiation of the Al0.20Ga0.80N sample, three additional electron traps labeled R2, R3, and R4 are observed. The first two traps appear to correspond to radiation-induced traps reported in GaN while the latter appears to be unique to AlGaN.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

Electron Irradiation of YBa2Cu3O7 at low Temperatures

1987 ◽  
Vol 99 ◽  
Author(s):  
B. Stritzker ◽  
W. Zander ◽  
F. Dworschak ◽  
U. Poppe ◽  
K. Fischer
Keyword(s):  
Transition Temperature ◽  
Electron Irradiation ◽  
Normal State ◽  
Low Temperatures ◽  
Superconducting Transition Temperature ◽  
Superconducting Transition ◽  
Radiation Induced ◽  
State Resistance ◽  
Normal State Resistance

ABSTRACTBulk samples of YBa2Cu3O7−x have been homogenously irradiated with 3 MeV electrons at temperatures below 20 K. Whereas the superconducting transition temperature, Tc, drops dramatically with increasing dose the width of the transition remains unchanged (Δ Tc ≤ 1.5 K). The normal state resistance at 100 K increases substantially during the electron irradiation. Several irreproducible experiments can be interpreted with a radiation induced, unstable increase of Tc.

Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

2002 ◽  
Vol 93 (1-3) ◽  
pp. 85-89 ◽  
Author(s):  
A Krtschil ◽  
A Kielburg ◽  
H Witte ◽  
A Krost ◽  
J Christen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Defect States ◽  
Deep Defect
Sign in / Sign up

Export Citation Format

Share Document