Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

2002 ◽  
Vol 93 (1-3) ◽  
pp. 85-89 ◽  
Author(s):  
A Krtschil ◽  
A Kielburg ◽  
H Witte ◽  
A Krost ◽  
J Christen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Defect States ◽  
Deep Defect

Single-photon tunneling in photonic crystals with deep defect states

2003 ◽  
Vol 28 (2) ◽  
pp. 93
Author(s):  
Igor I. Smolyaninov ◽  
Anatoly V. Zayats
Keyword(s):  
Photonic Crystals ◽  
Single Photon ◽  
Defect States ◽  
Deep Defect ◽  
Photon Tunneling

Recombination dynamics of deep defect states in zinc oxide nanowires

2009 ◽  
Vol 20 (17) ◽  
pp. 175706 ◽  
Author(s):  
S Lettieri ◽  
L Santamaria Amato ◽  
P Maddalena ◽  
E Comini ◽  
C Baratto ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zinc Oxide Nanowires ◽  
Defect States ◽  
Oxide Nanowires ◽  
Deep Defect ◽  
Recombination Dynamics

Electronic Structure of Defects in SnTe

2013 ◽  
Vol 701 ◽  
pp. 125-130
Author(s):  
Salameh Ahmad
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Fundamental Difference ◽  
Density Of State ◽  
Defect States ◽  
Deep Defect ◽  
Conduction Bands ◽  
Resonant States ◽  
Structure Calculations

Myab initioelectronic structure calculations inRSn2n-1Te2n, n=16, R = a vacancy, Cd, and In show that when Sn atom is substituted by R, the Density of State (DOS) of the valence and conduction bands get strongly perturbed. There are significant changes near the band gap region. Sn vacancy causes very little change near the bottom of the conduction band DOS whereas there is an increase in the DOS near the top of the valence band. Results for In impurity shows that, unlike PbTe, the deep defect states in SnTe are resonant states near the top of the valence band. In PbTe these deep defect states lie in the band-gap region (act asn-type). This fundamental difference in the position of the deep defect states in SnTe and PbTe explains the experimental anomalies seen in the case of In impurities (act asn-type in PbTe andp-type in SnTe).

Implantation Induced Defect States in Gallium Nitride and Their Annealing Behaviour

2001 ◽  
Vol 228 (1) ◽  
pp. 325-329 ◽  
Author(s):  
A. Krtschil ◽  
A. Kielburg ◽  
H. Witte ◽  
A. Krost ◽  
J. Christen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Defect States ◽  
Annealing Behaviour
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