Temperature dependence of excitonic transitions in AlxGa1−xAs/GaAs quantum wells

2001 ◽  
Vol 29 (3) ◽  
pp. 225-231 ◽  
Author(s):  
S.A. Lourenço ◽  
I.F.L. Dias ◽  
J.L. Duarte ◽  
E. Laureto ◽  
H. Iwamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Excitonic Transitions

Influence of Al content on temperature dependence of excitonic transitions in quantum wells

2001 ◽  
Vol 21 (1) ◽  
pp. 11-17 ◽  
Author(s):  
S.A. Lourenço ◽  
I.F.L. Dias ◽  
E. Laureto ◽  
J.L. Duarte ◽  
D.O. Toginho Filho ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Al Content ◽  
Excitonic Transitions

Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K

2018 ◽  
Vol 123 (20) ◽  
pp. 205705 ◽  
Author(s):  
Hideaki Murotani ◽  
Yuya Hayakawa ◽  
Kazuki Ikeda ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

Temperature Dependence of Contactless Electroreflance Spectroscopy of C-Plane ZnO Bulk

2011 ◽  
Vol 341-342 ◽  
pp. 6-10
Author(s):  
I Fan Lin ◽  
Chung Fu Chang ◽  
Dong Po Wang
Keyword(s):  
Temperature Dependence ◽  
Average Field ◽  
Excitonic Transitions ◽  
Best Fit

Contactless electroreflectance（CER）spectra of c-plane ZnO bulk have been measured from 20 to 300 K. Photoreflectance（PR）spectrum of ZnO bulk has also been measured at 300 K. The CER spectrum is red-shifted with respect to the PR spectrum at 300 K. It is known that the average field experienced in the CER is larger than that of the PR. In addition, the features of PR or CER is blue-shifted when the field becomes larger if they belong to band-to-band transitions. Hence, the observed features are excluded from band-to-band transitions and are attributed to excitonic transitions. The CER spectra were then fitted by Lorentzian profiles. The energies of the A（B）, B（A）, and C excitonic transitions at 0K, which were obtained by the best fit of Varshni’s equation, are 3.419, 3.436, and 3.482 eV, respectively.

Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells

1989 ◽  
Vol 39 (8) ◽  
pp. 5531-5534 ◽  
Author(s):  
D. Gershoni ◽  
H. Temkin ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
Quantum Wells ◽  
Excitonic Transitions

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained‐layer quantum wells

1995 ◽  
Vol 67 (1) ◽  
pp. 103-105 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
M. Leroux ◽  
C. Ongaretto ◽  
J. P. Faurie
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Strained Layer
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