Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained‐layer quantum wells

1995 ◽  
Vol 67 (1) ◽  
pp. 103-105 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
M. Leroux ◽  
C. Ongaretto ◽  
J. P. Faurie
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Strained Layer

Exchange and correlation effects in strained-layer semiconductor quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1046-1052
Author(s):  
C. Tong ◽  
M. R. Kim ◽  
S. K. Kim ◽  
B. H. Han ◽  
J. K. Rhee
Keyword(s):  
Quantum Wells ◽  
Correlation Effects ◽  
Strained Layer ◽  
Semiconductor Quantum Wells ◽  
Exchange And Correlation

Optical Properties of ZnCdSe/ZnSSe Strained-Layer Quantum Wells

1992 ◽  
Vol 31 (Part 1, No. 11) ◽  
pp. 3608-3614 ◽  
Author(s):  
Yi-hong Wu ◽  
Kunio Ichino ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Strained Layer

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

1988 ◽  
Vol 17 (5) ◽  
pp. 405-409 ◽  
Author(s):  
D. R. Myers ◽  
G. W. Arnold ◽  
I. J. Fritz ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Strained Layer ◽  
Implantation Damage
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