Influence of Al content on temperature dependence of excitonic transitions in quantum wells

2001 ◽  
Vol 21 (1) ◽  
pp. 11-17 ◽  
Author(s):  
S.A. Lourenço ◽  
I.F.L. Dias ◽  
E. Laureto ◽  
J.L. Duarte ◽  
D.O. Toginho Filho ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Al Content ◽  
Excitonic Transitions

Temperature dependence of excitonic transitions in AlxGa1−xAs/GaAs quantum wells

2001 ◽  
Vol 29 (3) ◽  
pp. 225-231 ◽  
Author(s):  
S.A. Lourenço ◽  
I.F.L. Dias ◽  
J.L. Duarte ◽  
E. Laureto ◽  
H. Iwamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Excitonic Transitions

Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K

2018 ◽  
Vol 123 (20) ◽  
pp. 205705 ◽  
Author(s):  
Hideaki Murotani ◽  
Yuya Hayakawa ◽  
Kazuki Ikeda ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

Temperature Dependence of Contactless Electroreflance Spectroscopy of C-Plane ZnO Bulk

2011 ◽  
Vol 341-342 ◽  
pp. 6-10
Author(s):  
I Fan Lin ◽  
Chung Fu Chang ◽  
Dong Po Wang
Keyword(s):  
Temperature Dependence ◽  
Average Field ◽  
Excitonic Transitions ◽  
Best Fit

Contactless electroreflectance（CER）spectra of c-plane ZnO bulk have been measured from 20 to 300 K. Photoreflectance（PR）spectrum of ZnO bulk has also been measured at 300 K. The CER spectrum is red-shifted with respect to the PR spectrum at 300 K. It is known that the average field experienced in the CER is larger than that of the PR. In addition, the features of PR or CER is blue-shifted when the field becomes larger if they belong to band-to-band transitions. Hence, the observed features are excluded from band-to-band transitions and are attributed to excitonic transitions. The CER spectra were then fitted by Lorentzian profiles. The energies of the A（B）, B（A）, and C excitonic transitions at 0K, which were obtained by the best fit of Varshni’s equation, are 3.419, 3.436, and 3.482 eV, respectively.

scholarly journals Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 796-802 ◽  
Author(s):  
Yong-Hoon Cho ◽  
G. H. Gainer ◽  
J. B. Lam ◽  
J. J. Song ◽  
W Yang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stokes Shift ◽  
Energy Shift ◽  
Peak Position ◽  
Time Resolved ◽  
Temperature Range ◽  
Al Content ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Intensity

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and time-resolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-shaped” full width at half maximum (FWHM) change (increase-decrease-increase) with increasing temperature. Based on time-resolved PL, the S shape (inverted S shape) of the PL peak position (FWHM) as a function of temperature, and the much smaller PL intensity decrease in the temperature range showing the anomalous emission behavior, we conclude that strong localization of carriers occurs in InGaN and even in AlGaN with rather high Al content. We observed that the following increase with increasing Al content in AlGaN epilayers: (i) a Stokes shift between the PL peak energy and the absorption edge, (ii) a redshift of the emission with decay time, (iii) the deviations of the PL peak energy, FWHM, and PL intensity from their typical temperature dependence, and (iv) the corresponding temperature range of the anomalous emission behavior. This indicates that the band-gap fluctuation responsible for these characteristics is due to energy tail states caused by non-random inhomogeneous alloy potential variations enhanced with increasing Al content.

Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells

1989 ◽  
Vol 39 (8) ◽  
pp. 5531-5534 ◽  
Author(s):  
D. Gershoni ◽  
H. Temkin ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
Quantum Wells ◽  
Excitonic Transitions
Sign in / Sign up

Export Citation Format

Share Document