Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K

2018 ◽  
Vol 123 (20) ◽  
pp. 205705 ◽  
Author(s):  
Hideaki Murotani ◽  
Yuya Hayakawa ◽  
Kazuki Ikeda ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitonic Transitions

Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. 206-210 ◽  
Author(s):  
O.J. Glembocki ◽  
B.V. Shanabrook ◽  
W.T. Beard
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells

2003 ◽  
Vol 93 (8) ◽  
pp. 4933-4935 ◽  
Author(s):  
Fei Chen ◽  
M. C. Cheung ◽  
Paul M. Sweeney ◽  
W. D. Kirkey ◽  
M. Furis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transmission Spectroscopy ◽  
Differential Transmission ◽  
Excitonic Transitions

Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

scholarly journals Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1023
Author(s):  
Yuhao Ben ◽  
Feng Liang ◽  
Degang Zhao ◽  
Xiaowei Wang ◽  
Jing Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Hydrogen Treatment ◽  
Key Factors ◽  
Anomalous Temperature ◽  
Luminescence Efficiency ◽  
Integrated Intensity ◽  
Non Equilibrium

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when temperature is beyond 140 K. The increased intensity is attributed to the electrons and holes whose distribution are spatial non-equilibrium distributed participated in the radiative recombination process and the quantum barrier layers are demonstrated to be the source of non-equilibrium distributed carriers. The temperature dependence of this kind of spatial non-equilibrium carriers’ dynamics is very different from that of equilibrium carriers, resulting in the increased emission efficiency which only occurs from 100 to 140 K. Moreover, the luminescence efficiency of MQWs with non-equilibrium carriers is much higher than that without non-equilibrium carriers, indicating the high luminescence efficiency of GaN-based LEDs may be caused by the non-equilibrium distributed carriers. Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is one of the key factors of this anomalous phenomenon.

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