Excitonic transitions in GaAs/GaxAl1−xAs quantum wells observed by photoreflectance spectroscopy: Comparison with a first-principles theory

1988 ◽  
Vol 37 (6) ◽  
pp. 3042-3051 ◽  
Author(s):  
W. M. Theis ◽  
G. D. Sanders ◽  
C. E. Leak ◽  
K. K. Bajaj ◽  
H. Morkoc
Keyword(s):  
Quantum Wells ◽  
First Principles ◽  
Photoreflectance Spectroscopy ◽  
Excitonic Transitions

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy

2007 ◽  
Vol 204 (2) ◽  
pp. 390-399 ◽  
Author(s):  
J. S. Rojas-Ramirez ◽  
C. M. Yee-Rendón ◽  
E. Cruz-Hernandez ◽  
R. Contreras-Guerrero ◽  
C. Vazquez-Lopez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Photoreflectance Spectroscopy

Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells

1989 ◽  
Vol 39 (8) ◽  
pp. 5531-5534 ◽  
Author(s):  
D. Gershoni ◽  
H. Temkin ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
Quantum Wells ◽  
Excitonic Transitions

Erratum to “Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBE”

2001 ◽  
Vol 392 (1) ◽  
pp. 150
Author(s):  
G. Sęk ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
M. Fischer ◽  
M. Reinhardt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoreflectance Spectroscopy

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

Post-growth annealing of GaInNAs layers and GaInNAs/GaAs multiple quantum wells studied by photoreflectance spectroscopy

2004 ◽  
Vol 151 (5) ◽  
pp. 323-327 ◽  
Author(s):  
R. Kudrawiec ◽  
J. Konttinen ◽  
M. Pessa ◽  
E.-M. Pavelescu ◽  
J. Misiewicz
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoreflectance Spectroscopy

Low Temperature Photoluminescence Studies of Narrow Bandgap Gaassbn Quantum Wells on GaAs

2002 ◽  
Vol 744 ◽  
Author(s):  
K.E. Waldrip ◽  
E.D. Jones ◽  
N.A. Modine ◽  
F. Jalali ◽  
J.F. Klem ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
First Principles ◽  
Structure Calculation ◽  
Ex Situ ◽  
Band Structure Calculation ◽  
Narrow Bandgap ◽  
Order Of Magnitude ◽  
Photoluminescence Studies

We present low-temperature (T = 4K) photoluminescence studies of the effect of adding nitrogen to 6-nm-wide single-strained GaAsSb quantum wells on GaAs. The samples were grown by both MBE and MOCVD tech-niques. The nominal Sb concentration is about 30%. Adding about 1 to 2% N drastically reduced the bandgap energies from 1 to 0.75 eV, or 1.20 to 1.64 μm. Upon performing ex situ rapid thermal anneals, 825°C for 10s, the band gap energies as well as the photoluminescence intensities increased. The intensities increased by an order of magnitude for the annealed samples and the band gap energies increased by about 50 - 100 meV, depending on growth temperatures. The photoluminescence linewidths tended to decrease upon annealing. Preliminary results of a first-principles band structure calculation for the GaAsSbN system are also presented.

Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells

2003 ◽  
Vol 93 (8) ◽  
pp. 4933-4935 ◽  
Author(s):  
Fei Chen ◽  
M. C. Cheung ◽  
Paul M. Sweeney ◽  
W. D. Kirkey ◽  
M. Furis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transmission Spectroscopy ◽  
Differential Transmission ◽  
Excitonic Transitions

Study of the effects of size quantization in coupled AlxGa1−x As/GaAs/Alx Ga1−x as quantum wells by means of photoreflectance spectroscopy

2002 ◽  
Vol 93 (6) ◽  
pp. 857-861 ◽  
Author(s):  
L. P. Avakyants ◽  
P. Yu. Bokov ◽  
G. B. Galiev ◽  
V. É. Kaminskii ◽  
V. A. Kul’bachinskii ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Size Quantization ◽  
Photoreflectance Spectroscopy

scholarly journals Study of excitonic transitions in δ-doped GaAs/AlAs quantum wells

2009 ◽  
Vol 49 (3) ◽  
pp. 291-297
Author(s):  
B. Čechavičius ◽  
R. Nedzinskas ◽  
J. Kavaliauskas ◽  
V. Karpus ◽  
G. Valušis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitonic Transitions
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