Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams

2009 ◽  
Vol 23 (20) ◽  
pp. 3264-3268 ◽  
Author(s):  
Satoshi Ninomiya ◽  
Kazuya Ichiki ◽  
Hideaki Yamada ◽  
Yoshihiko Nakata ◽  
Toshio Seki ◽  
...  
2018 ◽  
Vol 11 (1) ◽  
pp. 29-48 ◽  
Author(s):  
Nicholas Winograd

Gas cluster ion beams (GCIBs) provide new opportunities for bioimaging and molecular depth profiling with secondary ion mass spectrometry (SIMS). These beams, consisting of clusters containing thousands of particles, initiate desorption of target molecules with high yield and minimal fragmentation. This review emphasizes the unique opportunities for implementing these sources, especially for bioimaging applications. Theoretical aspects of the cluster ion/solid interaction are developed to maximize conditions for successful mass spectrometry. In addition, the history of how GCIBs have become practical laboratory tools is reviewed. Special emphasis is placed on the versatility of these sources, as size, kinetic energy, and chemical composition can be varied easily to maximize lateral resolution, hopefully to less than 1 micron, and to maximize ionization efficiency. Recent examples of bioimaging applications are also presented.


2009 ◽  
Vol 23 (11) ◽  
pp. 1601-1606 ◽  
Author(s):  
Satoshi Ninomiya ◽  
Kazuya Ichiki ◽  
Hideaki Yamada ◽  
Yoshihiko Nakata ◽  
Toshio Seki ◽  
...  

2010 ◽  
Vol 43 (1-2) ◽  
pp. 221-224 ◽  
Author(s):  
Satoshi Ninomiya ◽  
Kazuya Ichiki ◽  
Hideaki Yamada ◽  
Yoshihiko Nakata ◽  
Toshio Seki ◽  
...  

2015 ◽  
Vol 119 (27) ◽  
pp. 15316-15324 ◽  
Author(s):  
Kan Shen ◽  
Andreas Wucher ◽  
Nicholas Winograd

2000 ◽  
Vol 647 ◽  
Author(s):  
Noriaki Toyoda ◽  
Jiro Matsuo ◽  
Takaaki Aoki ◽  
Shunichi Chiba ◽  
Isao Yamada ◽  
...  

AbstractSecondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. For this purpose, it is important to prevent both ion-mixing and the surface roughening due to energetic ions. As the Ar cluster ion beam shows surface smoothing effects and high secondary-ion yield in the low-energy regime, the cluster ion beam would be suitable for the primary ion beam of SIMS. From MD simulations of Ar cluster ion impact on a Si substrate, the ion-mixing is heavier than for Ar monomer ions at the same energy per atom, because the energy density at the impact point by clusters is extremely high. However, the sputtering yields with Ar cluster ions are one or two orders of magnitude higher than that with Ar monomer ions at the same energy per atom. Comparing at the ion energy where the ion-mixing depths are the same by both cluster and monomer ion impacts, cluster ions show almost ten times higher sputtering yield than Ar monomer ions. Preliminary experiment was done with a conventional SIMS detector and a mass resolution of several nm was achieved with Ar cluster ions as a primary ion beam.


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