Light-emitting silicon films fabricated by neutral cluster deposition and subsequent high-temperature annealing

2006 ◽  
Vol 251 (1) ◽  
pp. 109-114
Author(s):  
Yukako Honda ◽  
Shigenari Shida ◽  
Kazuo Goda ◽  
Tetsuo Nagata
Keyword(s):  
High Temperature ◽  
Silicon Films ◽  
High Temperature Annealing ◽  
Neutral Cluster ◽  
Light Emitting ◽  
Cluster Deposition

Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

1990 ◽  
Vol 184 ◽  
Author(s):  
H. S. Hajghassem ◽  
W. D. Brown ◽  
J. R. Yeargan ◽  
J. G. Williams
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Neutron Fluence ◽  
Light Output ◽  
Infrared Light ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Current Voltage ◽  
Operating Current

ABSTRACTThis paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2194-2197 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Yaser Abdul Raheem ◽  
Abdul Azeez Alomar ◽  
Jef Poortmans
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
High Temperature Annealing ◽  
Thin Silicon

scholarly journals Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

2020 ◽  
Vol 217 (7) ◽  
pp. 1900796 ◽  
Author(s):  
Sylvia Hagedorn ◽  
Sebastian Walde ◽  
Norman Susilo ◽  
Carsten Netzel ◽  
Nadine Tillner ◽  
...  
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Sapphire Substrates

Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

2005 ◽  
Vol 113 (3-4) ◽  
pp. 279-284 ◽  
Author(s):  
Y. Honda ◽  
M. Takei ◽  
H. Ohno ◽  
S. Shida ◽  
K. Goda
Keyword(s):  
Neutral Cluster ◽  
Light Emitting ◽  
Cluster Deposition ◽  
Si Films

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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