Structure of the near-surface layer of Cz Si wafers subjected to low-temperature low-energy ion-beam treatment

2011 ◽  
Vol 8 (3) ◽  
pp. 739-742
Author(s):  
Alexander Fedotov ◽  
Inna Ivashkevich ◽  
Svetlana Kobeleva ◽  
Olga Korolik ◽  
Alexander Mazanik ◽  
...  
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Near Surface ◽  
Ion Beam Treatment

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 333-338 ◽  
Author(s):  
Anis M. Saad ◽  
Olga V. Zinchuk ◽  
N.A. Drozdov ◽  
A.K. Fedotov ◽  
A.V. Mazanik
Keyword(s):  
Low Temperature ◽  
Spectral Region ◽  
Ion Beam ◽  
Surface Region ◽  
Near Surface ◽  
Ion Energy ◽  
Ion Beam Treatment ◽  
P Type ◽  
20 Nm ◽  
Argon Ion

The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet (UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.

Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

scholarly journals Structure of the near-surface layer of NiTi on the meso- and microscale levels after ion-beam surface treatment

2014 ◽  
Author(s):  
L. L. Meisner ◽  
T. M. Poletika ◽  
S. N. Meisner ◽  
A. V. Tverdichlebova ◽  
S. L. Girsova ◽  
...  
Keyword(s):  
Surface Layer ◽  
Surface Treatment ◽  
Ion Beam ◽  
Near Surface ◽  
Beam Surface

GaAs surface cleaning by low energy hydrogen ion beam treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
N. Razek ◽  
K. Otte ◽  
T. Chassé ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface ◽  
Ion Beam Treatment

Low-energy ion beam treatment of α-Al2O3(0001) and improvement of photoluminescence of ZnO thin films

2004 ◽  
Vol 10 (4) ◽  
pp. 351-355 ◽  
Author(s):  
Jong-Young Park ◽  
Young-Soo No ◽  
Byung-Jun Park ◽  
Hyun-Woo Lee ◽  
Ji-Won Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Zno Thin Films ◽  
Ion Beam Treatment ◽  
Α Al2o3

Influence of low-energy ion-beam treatment by hydrogen on electrical activity of grain boundaries in polycrystalline silicon

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 269-272 ◽  
Author(s):  
A. Saad ◽  
A. Mazanik ◽  
A. Fedotov ◽  
J. Partyka ◽  
P. Węgierek ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Treatment
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