Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

Molecular Dynamics Simulations and Experimental Evidence for Deep Penetration by Channeled Ions During Low-Energy Ion Bombardment of III-V Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
N.G. Stoffel ◽  
S.A. Schwarz ◽  
M.A.A. Pudensi ◽  
K. Kash ◽  
L.T. Florez ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Energy ◽  
Ion Bombardment ◽  
Device Fabrication ◽  
Low Energy ◽  
Deep Penetration ◽  
Extensive Degradation ◽  
Dynamics Simulations

AbstractMolecular dynamics simulations are used to investigate the formation of deep crystalline damage during the low-energy ion bombardment of semiconductor crystals. The trajectories of primary ions are calculated as they propagated through a model crystal lattice. Energy losses by nuclear recoil and and by electronic excitation are included. For beams of heavy ions at energies below 1 keV, the average penetration range of the simulated trajectories is only a few nanometers. However, a small, but, significant fraction of the ions are found to scatter into <011= axial channels through which they propagate tens of nm below the surface. This effect is used to explain high-resolution secondary ion mass spectrometry and photoluminescence data which reveal deep ion penetration and optical damage on the same length scale. Our results suggest that unintentional ion channeling is a major factor in the extensive degradation of optical and electrical properties of semiconductor surfaces which are exposed to low energy ion bombardment during device fabrication.

CLUSTER ION BOMBARDMENT-INDUCED SURFACE DAMAGE OF Si

1996 ◽  
Vol 03 (01) ◽  
pp. 1045-1049 ◽  
Author(s):  
C.E. ASCHERON ◽  
M. AKIZUKI ◽  
J. MATSUO ◽  
Z. INSEPOV ◽  
G.H. TAKAOKA ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Ion Beams ◽  
Near Surface ◽  
Smooth Interface ◽  
Interaction Processes ◽  
Cluster Ion ◽  
Dynamics Simulations ◽  
Cluster Beams

Surface damage of single-crystalline Si caused by irradiation with Ar-ion cluster beams of different energies has been studied in comparison with that caused by Ar-monomer ion beams. The defected layers have been characterized by RBS channeling, XTEM, and ellipsometry. The experimental results are interpreted on the basis of TRIM and molecular dynamics simulations of the interaction processes with the target. It is found that cluster irradiation damages only a very thin near-surface layer which has a smooth interface to the undamaged substrate. Cluster-ion bombardment forms an oxide layer on the surface by the activation of adsorbed O atoms and substrate atoms.

Molecular Dynamics Simulation of Sputtering with Mmany-Body Interactions

1988 ◽  
Vol 100 ◽  
Author(s):  
Davy Y. Lo ◽  
Tom A. Tombrello ◽  
Mark H. Shapiro ◽  
Don E. Harrison
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Single Crystal ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Many Body ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Small Single Crystal

ABSTRACTMany-body forces obtained by the Embedded-Atom Method (EAM) [41 are incorporated into the description of low energy collisions and surface ejection processes in molecular dynamics simulations of sputtering from metal targets. Bombardments of small, single crystal Cu targets (400–500 atoms) in three different orientations ({100}, {110}, {111}) by 5 keV Ar+ ions have been simulated. The results are compared to simulations using purely pair-wise additive interactions. Significant differences in the spectra of ejected atoms are found.

scholarly journals Growth mechanism of hydrogenated carbon films: molecular dynamics simulations of the effects of low energy CH radical

2012 ◽  
Vol 61 (3) ◽  
pp. 030701
Author(s):  
Song Qing ◽  
Ji Li ◽  
Quan Wei-Long ◽  
Zhang Lei ◽  
Tian Miao ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Growth Mechanism ◽  
Carbon Films ◽  
Low Energy ◽  
Dynamics Simulations ◽  
Ch Radical

Low Energy Ar Ion Bombardment of (001) Si: Defects and Surface Morphology

1991 ◽  
Vol 223 ◽  
Author(s):  
M. V. R. Murty ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Molecular Dynamics ◽  
Surface Morphology ◽  
Surface Defect ◽  
Formation Rate ◽  
Ion Bombardment ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Defect Structures ◽  
Adatom Diffusion ◽  
Migration Component

ABSTRACTThe interaction of low energy Ar+ ions with several surface defect structures on (001) Si has been investigated using molecular dynamics simulation. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage, and that the displacement energies for different defect structures is different. The most important effect of ion bombardment on surface morphology is the increased formation rate of single adatoms, which may lead to smoother surfaces by enhanced coarsening at typical epitaxial temperatures. Simulations results also imply that the migration component of adatom diffusion is not significantly enhanced by ion bombardment at typical epitaxial temperatures (600 – 800 K).

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