Low-energy ion beam treatment of α-Al2O3(0001) and improvement of photoluminescence of ZnO thin films

2004 ◽  
Vol 10 (4) ◽  
pp. 351-355 ◽  
Author(s):  
Jong-Young Park ◽  
Young-Soo No ◽  
Byung-Jun Park ◽  
Hyun-Woo Lee ◽  
Ji-Won Choi ◽  
...  
2020 ◽  
Vol 27 (12) ◽  
pp. 2050019 ◽  
Author(s):  
A. ABDEL-GALIL ◽  
A. ATTA ◽  
M. R. BALBOUL

In this paper, we report the influence of low-energy oxygen ion irradiation with fluence ranging from [Formula: see text][Formula: see text][Formula: see text] to [Formula: see text][Formula: see text][Formula: see text] on the structural, optical, and electrical properties of fresh and annealed (400∘C, 3[Formula: see text]h) zinc oxide (ZnO) thin films. These films were grown on soda-lime glass (SLG) substrates using the spin-coating method as a low-cost depositing technique. X-ray diffraction (XRD) study showed the formation of the hexagonal phase of ZnO thin films with preferred orientation along the (002) plane. The crystallite size for fresh and annealed ZnO thin films was in nanoscale and it increased with the annealing temperature. Also, the crystallite size increased with the ion beam irradiation fluence in the case of annealed ZnO films, while it slightly decreased for the fresh ZnO films. The transmittance and absorbance spectra for the ZnO films were investigated in a wide wavelength range. The optical bandgap was specified by using Tauc’s relation. The electrical properties of the ZnO films (fresh and annealed at 400∘C for 3[Formula: see text]h) were studied before and after the oxygen ion beam irradiation. Also, the dielectric properties were investigated with respect to frequency at different ion beam irradiation fluences. The comprehensive results showed the dielectric and optical properties are improved due to the induced conductive networks by oxygen ion irradiation.


2002 ◽  
Vol 151-152 ◽  
pp. 189-193 ◽  
Author(s):  
G.G. Fuentes ◽  
D. Cáceres ◽  
I. Vergara ◽  
E. Elizalde ◽  
J.M. Sanz
Keyword(s):  
Ion Beam ◽  

2021 ◽  
pp. 130984
Author(s):  
Amardeep Bharti ◽  
Richa Bhardwaj ◽  
Kanika Upadhyay ◽  
Harkawal Singh ◽  
Asokan Kandasami ◽  
...  

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


Vacuum ◽  
2021 ◽  
Vol 183 ◽  
pp. 109869
Author(s):  
Chukwudi E. Iheomamere ◽  
Corey L. Arnold ◽  
Urmilaben P. Rathod ◽  
Khalil D. Omotosho ◽  
Andrey A. Voevodin ◽  
...  

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  

1996 ◽  
Vol 79 (8) ◽  
pp. 4939
Author(s):  
S. J. Guilfoyle ◽  
R. J. Pollard ◽  
P. J. Grundy

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