Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

2007 ◽  
Vol 4 (5) ◽  
pp. 1671-1674 ◽  
Author(s):  
K. Rajagopalan ◽  
J. Abrokwah ◽  
R. Droopad ◽  
M. Passlack
Keyword(s):  
Gallium Arsenide ◽  
High Mobility ◽  
Enhancement Mode

scholarly journals Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack

2019 ◽  
Vol 66 (4) ◽  
pp. 1710-1716 ◽  
Author(s):  
J. Urresti ◽  
F. Arith ◽  
S. Olsen ◽  
N. Wright ◽  
A. O'Neill
Keyword(s):  
High Mobility ◽  
Gate Stack ◽  
Enhancement Mode

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

2016 ◽  
Vol 37 (4) ◽  
pp. 377-380 ◽  
Author(s):  
Shuxun Lin ◽  
Maojun Wang ◽  
Fei Sang ◽  
Ming Tao ◽  
Cheng P. Wen ◽  
...  
Keyword(s):  
High Mobility ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
High Uniformity ◽  
Hemt Structure

AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

1966 ◽  
Vol 44 (5) ◽  
pp. 941-948 ◽  
Author(s):  
J. Basinski
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Hall Effect ◽  
Conduction Band ◽  
High Mobility ◽  
Theoretical Expression ◽  
Donor Level ◽  
Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

scholarly journals Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Zhong Wan ◽  
Aleksandr Kazakov ◽  
Michael J. Manfra ◽  
Loren N. Pfeiffer ◽  
Ken W. West ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

scholarly journals High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates

2004 ◽  
Vol 809 ◽  
Author(s):  
Carl Mueller ◽  
Samuel Alterovitz ◽  
Edward Croke ◽  
George Ponchak
Keyword(s):  
Atomic Force Microscopy ◽  
Field Effect ◽  
Room Temperature ◽  
High Mobility ◽  
Force Microscopy ◽  
Si Substrates ◽  
Enhancement Mode ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTSiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm2/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rms roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 μm gate lengths and 200 μm gate widths were fabricated and tested. An IDS of 9 mA was obtained by operating the transistor in an enhancement mode (positive VGS) and the maximum transconductance (gm) was 37 mS/mm at a VDS of 2.5 V. The transducer gain (Gt) measured with a loadpull system was 6.4 dB at 1 GHz for a VDS of 2.5 V and VGS=-0.4 V.

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