AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

1966 ◽  
Vol 44 (5) ◽  
pp. 941-948 ◽  
Author(s):  
J. Basinski
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Hall Effect ◽  
Conduction Band ◽  
High Mobility ◽  
Theoretical Expression ◽  
Donor Level ◽  
Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Evidence for Oxygen DX Centers in AlGaN

1998 ◽  
Vol 512 ◽  
Author(s):  
M. D. Mccluskey ◽  
N. M. Johnson ◽  
C. G. Van De Walle ◽  
D. P. Bour ◽  
M. Kneissl ◽  
...  
Keyword(s):  
Activation Energy ◽  
Hall Effect ◽  
First Principles ◽  
Aluminum Content ◽  
Threshold Energy ◽  
Persistent Photoconductivity ◽  
First Principles Calculations ◽  
Theoretical Predictions ◽  
Hall Effect Measurements ◽  
Theoretical Evidence

ABSTRACTExperimental and theoretical evidence is presented for oxygen DX centers in AlxGa1−xN. As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al0 39Ga0. 61N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV, in excellent agreement with first-principles calculations. Unlike oxygen, silicon does not exhibit DX-like behavior, in agreement with previous theoretical predictions.

Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures

1995 ◽  
Vol 66 (7) ◽  
pp. 842-844 ◽  
Author(s):  
K. Ismail ◽  
M. Arafa ◽  
Frank Stern ◽  
J. O. Chu ◽  
B. S. Meyerson
Keyword(s):  
Hall Effect ◽  
High Mobility ◽  
Hall Effect Measurements

scholarly journals Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

2017 ◽  
Vol 10 (4) ◽  
pp. 046601 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Yuji Kiuchi ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Dai Okamoto ◽  
...  
Keyword(s):  
Hall Effect ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Hall Effect Measurements

scholarly journals Density Functional Theory Study on Defect Feature of AsGaGaAsin Gallium Arsenide

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Deming Ma ◽  
Xi Chen ◽  
Hongbo Qiao ◽  
Wei Wang ◽  
Wei Shi ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Gallium Arsenide ◽  
Conduction Band ◽  
Density Functional ◽  
Crystal Surface ◽  
Deep Level ◽  
Donor Level ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Formation Energies

We investigate the defect feature ofAsGaGaAsdefect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT). Our calculations reveal that the lowest donor level ofAsGaGaAsdefect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of theAsGaGaAsdefect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV). This suggests thatAsGaGaAsdefect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internalAsGaGaAsand surfaceAsGaGaAsdefects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation ofAsGaGaAsdefect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

Sign in / Sign up

Export Citation Format

Share Document