scholarly journals Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack

2019 ◽  
Vol 66 (4) ◽  
pp. 1710-1716 ◽  
Author(s):  
J. Urresti ◽  
F. Arith ◽  
S. Olsen ◽  
N. Wright ◽  
A. O'Neill
Keyword(s):  
High Mobility ◽  
Gate Stack ◽  
Enhancement Mode

S-Passivation of the Ge Gate Stack Using (NH4)2S

2012 ◽  
Vol 187 ◽  
pp. 23-26 ◽  
Author(s):  
Sonja Sioncke ◽  
Claudia Fleischmann ◽  
Dennis Lin ◽  
Evi Vrancken ◽  
Matty Caymax ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Gate Stack ◽  
Process Flow ◽  
Oxide Deposition

The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.

ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation

2019 ◽  
Vol 33 (2) ◽  
pp. 9-23 ◽  
Author(s):  
Sonja Sioncke ◽  
Hang-Chun Lin ◽  
Christoph Adelmann ◽  
Guy Brammertz ◽  
A. Delabie ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Stack

Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

2007 ◽  
Vol 4 (5) ◽  
pp. 1671-1674 ◽  
Author(s):  
K. Rajagopalan ◽  
J. Abrokwah ◽  
R. Droopad ◽  
M. Passlack
Keyword(s):  
Gallium Arsenide ◽  
High Mobility ◽  
Enhancement Mode

Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs

2008 ◽  
Author(s):  
N. Goel ◽  
D. Heh ◽  
S. Koveshnikov ◽  
I. Ok ◽  
S. Oktyabrsky ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Stack

Oxygen Scavenging Effect of LaLuO 3 /TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

2016 ◽  
Vol 33 (5) ◽  
pp. 057701
Author(s):  
Jin-Feng Feng ◽  
Chang Liu ◽  
Wen-Jie Yu ◽  
Ying-Hong Peng
Keyword(s):  
Quantum Well ◽  
High Mobility ◽  
Gate Stack ◽  
Scavenging Effect ◽  
Oxygen Scavenging

scholarly journals Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

2012 ◽  
Vol 112 (9) ◽  
pp. 094501 ◽  
Author(s):  
Md. Shahinur Rahman ◽  
E. K. Evangelou ◽  
N. Konofaos ◽  
A. Dimoulas
Keyword(s):  
Rare Earth ◽  
High Mobility ◽  
Rare Earth Oxides ◽  
Gate Stack ◽  
Dielectric Degradation
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