X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

2010 ◽  
Vol 248 (3) ◽  
pp. 616-621 ◽  
Author(s):  
H. Bremers ◽  
A. Schwiegel ◽  
L. Hoffmann ◽  
H. Jönen ◽  
U. Rossow ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Composition Analysis ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

2011 ◽  
Vol 109 (12) ◽  
pp. 124906 ◽  
Author(s):  
S. M. O’Malley ◽  
P. Revesz ◽  
A. Kazimirov ◽  
A. A. Sirenko
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
X Ray ◽  
Optical Luminescence

High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures

1997 ◽  
Vol 19 (2-4) ◽  
pp. 447-454 ◽  
Author(s):  
C. R. Li ◽  
B. K. Tanner ◽  
P. Möck ◽  
J. H. C. Hogg ◽  
B. Lunn ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Laser-Modified Chemical Beam Epitaxy of InGaAs/GaAs Multiple Quantum Wells Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 354 ◽  
Author(s):  
H.K. Dong ◽  
N.Y. Li ◽  
C.W. Tu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Irradiation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Structures ◽  
X Ray ◽  
Strained Quantum Well ◽  
First Time

AbstractWe report for the first time laser-modified chemical beam epitaxy (CBE) of InGaAs/GaAs multiple quantum well (MQW) structures using trimethylindium (TMIn), triethylgallium (TEGa), and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. X-ray rocking curve (XRC) and low-temperature photoluminescence (PL) measurements were used to characterize the pseudomorphic strained quantum well structures. As determined by the X-ray simulation, laser irradiation during the InGaAs well growth was found to enhance the InGaAs growth rate and reduce the indium concentration in the substrate temperature range studied, 440-S00°C, where good interfaces can be achieved. We attribute these changes to laser-enhanced decomposition of TEGa and laser-enhanced desorption of TDMAAs. With laser irradiation, lateral variation of PL exciton peaks was observed, and the PL peaks became narrower.

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

1994 ◽  
Vol 299 ◽  
Author(s):  
D. W. Greve ◽  
R. Misra ◽  
R. Strong ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Free Carrier Absorption ◽  
Ir Detectors ◽  
Quantum Well Structures ◽  
X Ray ◽  
Carrier Absorption

AbstractDoped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

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