Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

2011 ◽  
Vol 109 (12) ◽  
pp. 124906 ◽  
Author(s):  
S. M. O’Malley ◽  
P. Revesz ◽  
A. Kazimirov ◽  
A. A. Sirenko
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

2010 ◽  
Vol 248 (3) ◽  
pp. 616-621 ◽  
Author(s):  
H. Bremers ◽  
A. Schwiegel ◽  
L. Hoffmann ◽  
H. Jönen ◽  
U. Rossow ◽  
...  

1989 ◽  
Vol 55 (8) ◽  
pp. 772-774 ◽  
Author(s):  
M. Capizzi ◽  
C. Coluzza ◽  
A. Frova ◽  
U. Cebulla ◽  
A. Forchel

Sign in / Sign up

Export Citation Format

Share Document