High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures

1997 ◽  
Vol 19 (2-4) ◽  
pp. 447-454 ◽  
Author(s):  
C. R. Li ◽  
B. K. Tanner ◽  
P. Möck ◽  
J. H. C. Hogg ◽  
B. Lunn ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

2010 ◽  
Vol 248 (3) ◽  
pp. 616-621 ◽  
Author(s):  
H. Bremers ◽  
A. Schwiegel ◽  
L. Hoffmann ◽  
H. Jönen ◽  
U. Rossow ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Composition Analysis ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray

Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

2011 ◽  
Vol 109 (12) ◽  
pp. 124906 ◽  
Author(s):  
S. M. O’Malley ◽  
P. Revesz ◽  
A. Kazimirov ◽  
A. A. Sirenko
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
X Ray ◽  
Optical Luminescence
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