Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

1994 ◽  
Vol 299 ◽  
Author(s):  
D. W. Greve ◽  
R. Misra ◽  
R. Strong ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Free Carrier Absorption ◽  
Ir Detectors ◽  
Quantum Well Structures ◽  
X Ray ◽  
Carrier Absorption

AbstractDoped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

1993 ◽  
Vol 73 (12) ◽  
pp. 8489-8494 ◽  
Author(s):  
J. M. Zavada ◽  
F. Voillot ◽  
N. Lauret ◽  
R. G. Wilson ◽  
B. Theys
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5781-5787 ◽  
Author(s):  
Kestutis Jarasiunas ◽  
Vygantas Mizeikis ◽  
Satoshi Iwamoto ◽  
Masao Nishioka ◽  
Takao Someya ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Four Wave Mixing ◽  
Multiple Quantum ◽  
Wave Mixing ◽  
Quantum Well Structures

Responsivity of multiple quantum well structures grown by MOCVD at normal incidence

2003 ◽  
Author(s):  
Vladimir B. Kulikov ◽  
G. H. Avetisyan ◽  
L. M. Vasilevskaya ◽  
I. D. Zalevsky ◽  
I. V. Budkin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Quantum Well Structures

Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well Structures

2002 ◽  
Vol 389-393 ◽  
pp. 1497-1500
Author(s):  
Chien-Rong Lu ◽  
Jia Ren Lee ◽  
Yo-Yu Chen ◽  
Wei I Lee ◽  
Shih-Chang Lee
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

2008 ◽  
Vol 93 (11) ◽  
pp. 111906 ◽  
Author(s):  
L. Lahourcade ◽  
P. K. Kandaswamy ◽  
J. Renard ◽  
P. Ruterana ◽  
H. Machhadani ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Characterization ◽  
Multiple Quantum ◽  
Quantum Well Structures

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation
Sign in / Sign up

Export Citation Format

Share Document