Induced tantalum silicide formation by Ar+ ion implantation

1987 ◽  
Vol 101 (2) ◽  
pp. K125-K127
Author(s):  
H. Cebulla ◽  
E. Ekben ◽  
T. Gessner ◽  
E. Vetter
Keyword(s):  
Ion Implantation ◽  
Silicide Formation ◽  
Tantalum Silicide

Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
K. T. Ho ◽  
C.-D. Lien ◽  
M-A. Nicolet ◽  
D. M. Scott
Keyword(s):  
Nuclear Reaction ◽  
Host Lattice ◽  
Chemical Affinity ◽  
Silicide Formation ◽  
Silicide Layer ◽  
Physical Effects ◽  
Rare Isotopes ◽  
Silicon System ◽  
Tantalum Silicide ◽  
Oxygen Impurities

ABSTRACTTantalum, being a refractory metal, is sensitive to ambient impurities when forming a silicide. By introducing nitrogen and oxygen impurities into a tantalum-silicon system, interesting chemical and physical effects are observed in their subsequent reactions. Nitrogen and oxygen behave similarly in such a system. If initially present in Ta, they segregate into the still unreacted Ta as the silicide layer grows at a somewhat retarded rate. The same impurities, initially present in Si, are immobile in the form of stable compouis and suppress TaSi2 growth. The rare isotopes 15N and 18O are introduced bY implantation and Profiled by 15N(P,α)12C and 18O(P,α)15N nuclear reaction analyses, respectively. In addition, unintentionally incorporated 18O is checked by the 16O(d,α) 14N nuclear reaction. The results are explained in terms of the moving species Si, and of the chemical affinity, solubility and diffusivity of the impurities in their host lattice.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Effects of ion‐implantation‐induced damages and impurity on platinum silicide formation

1982 ◽  
Vol 53 (9) ◽  
pp. 6144-6147 ◽  
Author(s):  
Y. Mashiko ◽  
H. Koyama ◽  
S. Kawazu ◽  
T. Kashiwaki
Keyword(s):  
Ion Implantation ◽  
Silicide Formation ◽  
Platinum Silicide

Exafs Studies of Cobalt Silicide Formation Produced by High Dose Ion Implantation

1988 ◽  
Vol 143 ◽  
Author(s):  
Z. Tan ◽  
J. I. Budnick ◽  
F. Sanchez ◽  
G. Tourillon ◽  
F. Namavar ◽  
...  
Keyword(s):  
Fine Structure ◽  
Ion Implantation ◽  
Single Phase ◽  
High Dose ◽  
Cobalt Silicide ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ordered Phases ◽  
X Ray Absorption

AbstractThe early stages of cobalt silicide formation in high dose (1.0 to 8.0× 1017Co/cm2) cobalt implanted Si(100) are studied by extended X-ray absorption fine structure (EXAFS), X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). Locally ordered silicide that is not detectable in XRD has been observed with EXAFS in the as-implanted samples. Long-range ordered phases are observed in the 3 × 1017Co/cm2 samples. After thermal annealing at 700–750°C, single phase CoSi2 with (400) orientation is formed in all implants.

Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

1989 ◽  
Vol 147 ◽  
Author(s):  
W. Lur ◽  
J. Y. Cheng ◽  
L. J. Chen
Keyword(s):  
Ion Implantation ◽  
Diffusion Barrier ◽  
Complete Removal ◽  
Vacancy Diffusion ◽  
Silicide Formation ◽  
Silicide Growth ◽  
Ion Implanted

AbstractComplete removal of end-of-range (EOR) defects in ion implanted silicon has been achieved by the formation and growth of near noble silicides (CoSi 2 and NiSi 2 ) and refractory silicides (MoSi 2 and WSi2). Continued generation of vacancies during the silicide growth was found to be essential to reduce EOR defects. The results are consistent with the suggestion of the presence of a vacancy diffusion barrier near the EOR defects

Refractory metal silicide formation by ion implantation

1980 ◽  
Vol 74 (2) ◽  
pp. 239-244 ◽  
Author(s):  
K.L. Wang ◽  
S.W. Chiang ◽  
F. Bacon ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Refractory Metal ◽  
Metal Silicide ◽  
Silicide Formation
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