Silicon interstitials: Injection during palladium silicide formation and trapping by ion implantation damage

1996 ◽  
Vol 68 (2) ◽  
pp. 247-249 ◽  
Author(s):  
Per Kringho/j
Keyword(s):  
Ion Implantation ◽  
Silicide Formation ◽  
Implantation Damage ◽  
Palladium Silicide

Rapid Thermal Processing — A User'S Perspective

1987 ◽  
Vol 92 ◽  
Author(s):  
R. T. Fulks
Keyword(s):  
Ion Implantation ◽  
High Throughput ◽  
Thermal Processing ◽  
Research Laboratory ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
User Perspective ◽  
Initial Application ◽  
Implantation Damage ◽  
And Control

ABSTRACTThe technique of rapid thermal processing (RTP) has evolved from research laboratory efforts to quickly heat small pieces of semiconductor material using pulsed or scanned lasers to high throughput, production RTP equipment capable of rapidly heating eight-inch silicon wafers to greater than 1000 deg C in 10 seconds. Furthermore, the initial application of annealing ion implantation damage has expanded to include silicide formation, oxide reflow, contact formation, hillock control and more recently oxidation and nitridation. Nearly a dozen vendors now produce RTP equipment and the potential user must answer the question — “Which equipment is best for me?” The researcher's principal concerns for RTP equipment are flexibility and control while the production engineer wants unifomity, reproducibility, and a reasonable throughput. Meanwhile, the device designer wants a “safe” process with no contamination or other adverse device degradation effects. This paper will focus on these and other issues associated with the use of rapid thermal processing from a user' perspective including some thoughts on where RTP may be headed in the future.

Ultra-Shallow Raised P+N Junctions with Self-Aligned Titanium Silicide Contacts formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers

1995 ◽  
Vol 387 ◽  
Author(s):  
H. T. Shih ◽  
K. E. Violette ◽  
M. C. Öztürk
Keyword(s):  
Ion Implantation ◽  
Sheet Resistance ◽  
Total Pressure ◽  
Titanium Silicide ◽  
Background Concentration ◽  
Epitaxial Layers ◽  
Silicide Formation ◽  
Implantation Damage ◽  
Selective Etch ◽  
Current Densities

AbstractIn this study, we have fabricated ultra-shallow p+n junctions by boron outdiffusion from selectively deposited Si epitaxial layers. The undoped layers (900 – 1000 Å) were selectively deposited on active areas in a UHV-RTCVD reactor using Si2H6 and Cl2 at 800°C and at a total pressure less than 30 mTorr. Junctions were formed by BF2 ion-implantation into epitaxial layers with and without Ge preamorphization followed by RTA at 1000°C and 1050°C for 10 s in Ar. Junction depths ranging from 400 Å to 700 Å were formed at a background concentration of l×1016 cm−3. Abrupt boron profiles with epitaxy/substrate interface concentrations on the order of 1020 cm-3 were formed. Self-aligned TiSi2 was formed at four different thicknesses by evaporating 100, 200, 300 or 400 Å thick Ti followed by a two-step RTA cycle with a selective etch between to remove the unreacted Ti on Si02. Our results show that raised junctions with a Ti thickness of 400 Å (corresponding to a TiSi2 thickness over 900 Å and consumption of the entire epitaxial layer) exhibit a reverse leakage of less than 10 pA for a device area of 800×800 μm2. This corresponds to areal and peripheral leakage current densities of 67 pA/cm2 and 4 pA/cm. Therefore, thick silicide layers can be used on raised junctions reducing the junction sheet resistance and eliminating the possibility of silicide agglomeration. Furthermore, implantation damage in substrate is eliminated by confining the implant into the raised region which is later consumed during silicide formation.

scholarly journals Palladium silicide formation under the influence of nitrogen and oxygen impurities

1985 ◽  
Vol 57 (2) ◽  
pp. 232-236 ◽  
Author(s):  
K. T. Ho ◽  
C.‐D. Lien ◽  
M‐A. Nicolet
Keyword(s):  
Silicide Formation ◽  
Palladium Silicide ◽  
Oxygen Impurities

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Ion‐implantation‐damage gettering effect in silicon photodiode array camera target

1973 ◽  
Vol 22 (5) ◽  
pp. 238-240 ◽  
Author(s):  
C.M. Hsieh ◽  
J.R. Mathews ◽  
H.D. Seidel ◽  
K.A. Pickar ◽  
C.M. Drum
Keyword(s):  
Ion Implantation ◽  
Silicon Photodiode ◽  
Implantation Damage ◽  
Photodiode Array ◽  
Array Camera
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