Frequency response of Si–SiO2 interface states on thin oxide MOS capacitors

1972 ◽  
Vol 12 (1) ◽  
pp. 95-109 ◽  
Author(s):  
D. H. Eaton ◽  
C. T. Sah
Keyword(s):  
Frequency Response ◽  
Interface States ◽  
Mos Capacitors ◽  
Thin Oxide

scholarly journals Characterization of SiO2/SiC Interface of Phosphorous-Doped MOS Capacitors by Conductance Measurements

2019 ◽  
Vol 8 (3) ◽  
pp. 5505-5508
Keyword(s):  
Frequency Response ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Conductance Method ◽  
Mos Structures

Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface states and interface state density determined by C-ψs method was studied. It was found that fast states in phosphorous incorporated samples reduced significantly at high frequency (>5 MHz) while sample annealed with nitrogen remained high up to 10 MHz. The interface state density, Dit of phosphorous incorporated sample near conduction band is lower compared to nitridated sample. These results indicate phosphorous passivation effectively reduces Dit at the SiO2 /SiC interfaces and can be correlated to high channel mobility.

Long‐term charge storage in interface states of ZnS MOS capacitors

1975 ◽  
Vol 46 (7) ◽  
pp. 2992-2997 ◽  
Author(s):  
L. G. Walker ◽  
G. W. Pratt Jr.
Keyword(s):  
Interface States ◽  
Charge Storage ◽  
Mos Capacitors

Relationship between trapped holes and interface states in MOS capacitors

1980 ◽  
Vol 36 (7) ◽  
pp. 590-592 ◽  
Author(s):  
Genda Hu ◽  
Walter C. Johnson
Keyword(s):  
Interface States ◽  
Mos Capacitors

A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors

1999 ◽  
Vol 43 (3) ◽  
pp. 641-644 ◽  
Author(s):  
A. Koukab ◽  
A. Hoffmann ◽  
A. Bath ◽  
J.-P. Charles
Keyword(s):  
Simple Technique ◽  
Interface State ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Thin Oxide ◽  
State Analysis

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

2006 ◽  
Vol 527-529 ◽  
pp. 1301-1304
Author(s):  
Mitsuo Okamoto ◽  
Mieko Tanaka ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda
Keyword(s):  
Valence Band ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Interface States ◽  
Wet Oxidation ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Dry Oxidation ◽  
Low Threshold ◽  
P Type

We have fabricated inversion-type p-channel MOSFETs on 4H-SiC substrates. In this paper, influences of gate oxidation process on the properties of p-channel MOSFETs were investigated. The gate oxide was formed under these three conditions: (i) dry oxidation, (ii) dry oxidation following wet re-oxidation, and (iii) wet oxidation. The C-V measurements of p-type 4H-SiC MOS capacitors revealed that wet oxidation process reduced the interface states near the valence band. The p-channel MOSFET with low interface states near the valence band indicated low threshold voltage (Vth), high field effect channel mobility (μFE) and low subthreshold swing (S). We obtained 4H-SiC p-channel MOSFET with high μFE of 15.6cm2/Vs by using wet oxidation as gate oxidation process.

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