The Effect of Hydrogen on the Device Stability of Amorphous InGaZnO Thin‐Film Transistors under Positive Bias with Various Temperature Stresses

2019 ◽  
Vol 216 (20) ◽  
pp. 1900297 ◽  
Author(s):  
Myeong-Ho Kim ◽  
Jun-won Park ◽  
Jun-Hyung Lim ◽  
Duck-Kyun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Temperature Stresses ◽  
Device Stability ◽  
Amorphous Ingazno

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

2012 ◽  
Vol 33 (1) ◽  
pp. 62-64 ◽  
Author(s):  
Sungchul Kim ◽  
Yong Woo Jeon ◽  
Yongsik Kim ◽  
Dongsik Kong ◽  
Hyun Kwang Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Positive Bias ◽  
Amorphous Ingazno

Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress

2015 ◽  
Vol 36 (10) ◽  
pp. 1047-1049 ◽  
Author(s):  
Jungmin Lee ◽  
Sungju Choi ◽  
Seong Kwang Kim ◽  
Sung-Jin Choi ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress ◽  
Amorphous Ingazno
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