Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress

2015 ◽  
Vol 36 (10) ◽  
pp. 1047-1049 ◽  
Author(s):  
Jungmin Lee ◽  
Sungju Choi ◽  
Seong Kwang Kim ◽  
Sung-Jin Choi ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Effects of Alternating Pulse Bias Stress on Amorphous InGaZnO Thin Film Transistors

2012 ◽  
Vol 45 (7) ◽  
pp. 111-117 ◽  
Author(s):  
S. Park ◽  
E. N. Cho ◽  
I. Yun
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Amorphous Ingazno

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

scholarly journals Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 603 ◽  
Author(s):  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Characteristic Length ◽  
Ambient Atmosphere ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Amorphous Ingazno ◽  
Gate Bias Stress

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

Sign in / Sign up

Export Citation Format

Share Document