Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

2012 ◽  
Vol 33 (1) ◽  
pp. 62-64 ◽  
Author(s):  
Sungchul Kim ◽  
Yong Woo Jeon ◽  
Yongsik Kim ◽  
Dongsik Kong ◽  
Hyun Kwang Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Positive Bias ◽  
Amorphous Ingazno

Effects of oxygen flow rate on the electrical stability of zinc oxynitride thin-film transistors

2017 ◽  
Vol 56 (2) ◽  
pp. 020301 ◽  
Author(s):  
Dae-Hwan Kim ◽  
Hwan-Seok Jeong ◽  
Chan-Yong Jeong ◽  
Sang-Hun Song ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Electrical Stability

scholarly journals Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2357
Author(s):  
Gwomei Wu ◽  
Anup K. Sahoo
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Channel Width ◽  
Oxygen Flow ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Indium Gallium

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 106, 0.15 V/decade and 12.3 cm2/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 107 and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

scholarly journals Influence of Oxygen Flow Rate on Sputter Deposition Rate and SEM Image of Copper Oxide Thin Films

2015 ◽  
Vol 773-774 ◽  
pp. 711-715
Author(s):  
Nayan Nafarizal ◽  
Jia Wei Low ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Deposition Rate ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Sem Image ◽  
Copper Oxide Thin Film

Recently, copper oxide thin film has been studied because of its low cost, sensitivity to ambient condition and easiness to produce oxide thin film. It is one of the p-type semiconductor oxides materials that are suitable to be used as gas sensing material. In order to improve the sensitivity and to optimize the properties of copper oxide thin film, it is essential to study the physical structure of copper oxide. In current studies, copper oxide thin film has been deposited by RF magnetron sputtering at different substrate bias voltages and oxygen flow rates. The results reveal that the deposition rate decreased when the oxygen flow rate above 4 sccm. SEM image reveal that nanostructure copper oxide was also obtained when the oxygen flow rate was above 4 sccm. On the other hand, no significant effect on the substrate bias voltage toward the sputter deposition rate was observed.

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