Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

2018 ◽  
pp. 1800505 ◽  
Author(s):  
Bilal Hassan ◽  
Adrien Cutivet ◽  
Meriem Bouchilaoun ◽  
Christophe Rodriguez ◽  
Ali Soltani ◽  
...  
Keyword(s):  
Gan Hemts ◽  
Gate Resistance

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

2018 ◽  
pp. 1800503
Author(s):  
Adrien Cutivet ◽  
Meriem Bouchilaoun ◽  
Bilal Hassan ◽  
Christophe Rodriguez ◽  
Ali Soltani ◽  
...  
Keyword(s):  
Time Resolution ◽  
Resistance Thermometry ◽  
Gan Hemts ◽  
Thermal Transient ◽  
Gate Resistance

scholarly journals Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

2017 ◽  
Vol 38 (2) ◽  
pp. 240-243 ◽  
Author(s):  
Adrien Cutivet ◽  
Flavien Cozette ◽  
Meriem Bouchilaoun ◽  
Ahmed Chakroun ◽  
Osvaldo Arenas ◽  
...  
Keyword(s):  
Resistance Measurement ◽  
Self Heating ◽  
Gan Hemts ◽  
Gate Resistance

Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

2017 ◽  
Vol 64 (1) ◽  
pp. 78-83 ◽  
Author(s):  
Georges Pavlidis ◽  
Spyridon Pavlidis ◽  
Eric R. Heller ◽  
Elizabeth A. Moore ◽  
Ramakrishna Vetury ◽  
...  
Keyword(s):  
Resistance Thermometry ◽  
Gan Hemts ◽  
Gate Resistance

dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

2013 ◽  
Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney
Keyword(s):  
Deep Submicron ◽  
Work Flow ◽  
Localization Technique ◽  
Characterization Techniques ◽  
Capacitance Voltage ◽  
Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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