Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry

2017 ◽  
Vol 64 (1) ◽  
pp. 78-83 ◽  
Author(s):  
Georges Pavlidis ◽  
Spyridon Pavlidis ◽  
Eric R. Heller ◽  
Elizabeth A. Moore ◽  
Ramakrishna Vetury ◽  
...  
Keyword(s):  
Resistance Thermometry ◽  
Gan Hemts ◽  
Gate Resistance

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

2018 ◽  
pp. 1800503
Author(s):  
Adrien Cutivet ◽  
Meriem Bouchilaoun ◽  
Bilal Hassan ◽  
Christophe Rodriguez ◽  
Ali Soltani ◽  
...  
Keyword(s):  
Time Resolution ◽  
Resistance Thermometry ◽  
Gan Hemts ◽  
Thermal Transient ◽  
Gate Resistance

scholarly journals Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

2017 ◽  
Vol 38 (2) ◽  
pp. 240-243 ◽  
Author(s):  
Adrien Cutivet ◽  
Flavien Cozette ◽  
Meriem Bouchilaoun ◽  
Ahmed Chakroun ◽  
Osvaldo Arenas ◽  
...  
Keyword(s):  
Resistance Measurement ◽  
Self Heating ◽  
Gan Hemts ◽  
Gate Resistance

dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

2013 ◽  
Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney
Keyword(s):  
Deep Submicron ◽  
Work Flow ◽  
Localization Technique ◽  
Characterization Techniques ◽  
Capacitance Voltage ◽  
Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

The Impact of Temperature on GaN/Si HEMTs Under RF Operation Using Gate Resistance Thermometry

2019 ◽  
Vol 66 (1) ◽  
pp. 330-336 ◽  
Author(s):  
Georges Pavlidis ◽  
Shamit Som ◽  
Jason Barrett ◽  
Wayne Struble ◽  
Samuel Graham
Keyword(s):  
Resistance Thermometry ◽  
Gate Resistance ◽  
The Impact

Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy

2017 ◽  
Vol 64 (5) ◽  
pp. 2135-2141 ◽  
Author(s):  
Agostino Benvegnu ◽  
Sylvain Laurent ◽  
Olivier Jardel ◽  
Jean-Luc Muraro ◽  
Matteo Meneghini ◽  
...  
Keyword(s):  
Current Transient ◽  
Gan Hemts ◽  
Transient Spectroscopy

A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs

2020 ◽  
Author(s):  
Pedro M. Tome ◽  
Filipe M. Barradas ◽  
Luis C. Nunes ◽  
Joao L. Gomes ◽  
Telmo R. Cunha ◽  
...  
Keyword(s):  
Electron Trapping ◽  
Gan Hemts

scholarly journals In-Situ and Ex-Situ Characterization of Evolution of Defects in AlGaN/GaN HEMTs under Bias

2013 ◽  
Vol 19 (S2) ◽  
pp. 452-453
Author(s):  
H. Ghassemi ◽  
A. Lang ◽  
C. Johnson ◽  
R. Wang ◽  
B. Song ◽  
...  
Keyword(s):  
Ex Situ ◽  
Gan Hemts

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths

2010 ◽  
Vol 54 (5) ◽  
pp. 582-585 ◽  
Author(s):  
Heng-Kuang Lin ◽  
Fan-Hsiu Huang ◽  
Hsiang-Lin Yu
Keyword(s):  
Gan Hemts ◽  
Gate Recess
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